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MURA130T3

Onsemi

MURA130T3 by Onsemi

MURA130T3 by Onsemi is a single rectifier diode with ultra-fast recovery power, suitable for applications requiring high-speed performance. With a max output current of 2A and peak repetitive reverse voltage of 300V, it operates at temperatures up to 175 °C. This surface-mount diode has a small outline package style and tin-lead terminal finish.

Median Price

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Lifecycle Status

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4

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1k+

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Vyrian

USA . 8,890 parts In-Stock

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Digiode

USA . 2,367 parts In-Stock

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QIE Inc.

USA . 119 parts In-Stock

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Semi Source

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AZTECH Wire

Italy . 211 parts In-Stock

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$8.150

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Component Stockers USA

USA . 395 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,270 parts In-Stock

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TANS Electronics

Latvia . 7,271 parts In-Stock

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Kulean Microsystems

USA . 7,255 parts In-Stock

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SupplyDigital Components

Austria . 6,850 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,408 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 562 parts In-Stock

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Corohmni

South Africa . 290 parts In-Stock

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Overview

Looking for a high-quality and reliable rectifier diode for your ultra-fast recovery power applications? Look no further than the MURA130T3 by Onsemi. With a maximum operating temperature of 175 °C and a peak repetitive peak reverse voltage of 300V, this single-config diode offers superior performance in a small outline package. Whether you're working on power supplies, inverters, or motor drives, the MURA130T3 delivers efficient and dependable power management. Trust Onsemi's expertise in diodes and rectifiers to provide you with the value and quality you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection, making the product suitable for various environments.

Config: SINGLE

Simplified configuration makes it easier to integrate into electronic circuits.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and space.

Maximum Reverse Recovery Time: 0.065 us

The ultra-fast reverse recovery time ensures efficient operation and minimizes power losses.

Package Shape: RECTANGULAR

Rectangular shape provides ease of handling and mounting in electronic devices.

No. of Terminals: 2

Simple two-terminal connection for straightforward circuit design and implementation.

Package Style (Meter): SMALL OUTLINE

Compact size and small outline save space on the PCB, ideal for densely populated circuit boards.

Application: ULTRA FAST RECOVERY POWER

Specifically designed for applications requiring high speed and efficiency, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in installation and connection options.

Peak Reflow Temperature °C: 235

A high peak reflow temperature ensures stable and secure soldering during assembly.

Diode Type: RECTIFIER DIODE

Rectifier diode type allows for efficient conversion of AC to DC, essential for power supply circuits.

Maximum Forward Voltage (VF): 0.8 V

Low forward voltage drop minimizes power loss and improves overall efficiency.

Maximum Output Current: 2 A

Capable of handling up to 2 amps of current, suitable for a variety of power applications.

Terminal Form: C BEND

C bend terminal form provides secure and reliable connections in the circuit.

Maximum Repetitive Peak Reverse Voltage: 300 V

Can withstand high reverse voltages, ensuring reliable operation in demanding conditions.

Maximum Non Repetitive Peak Forward Current: 35 A

High non-repetitive peak forward current rating allows for brief surges in current without damage.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in rectification applications.

Technical Specifications

Diodes & Rectifiers MURA130T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.8 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

35 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

300 V

Maximum Reverse Recovery Time:

.065 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA130T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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