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MURA220T3

Onsemi

MURA220T3 by Onsemi

MURA220T3 by Onsemi is a single diode with a max reverse recovery time of 0.035 us. It is designed for high voltage ultra fast recovery power applications, with a max operating temperature of 175°C. This rectifier diode has a max output current of 2A and can handle up to 200V repetitive peak reverse voltage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 395,500 parts In-Stock

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395,500

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Vyrian

USA . 2,044 parts In-Stock

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2,044

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Digiode

USA . 344 parts In-Stock

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344

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Aztec Data Supply Inc.

USA . 40 parts In-Stock

1+ parts

$0.030

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40

$0.030

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Ampacity Inc.

Singapore . 513 parts In-Stock

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$1.010

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513

$1.010

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AZTECH Wire

Italy . 378 parts In-Stock

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$9.904

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378

$9.904

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RC Electronics

USA . 54,000 parts In-Stock

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TANS Electronics

Latvia . 6,961 parts In-Stock

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Continental Prestige Electronics

USA . 5,569 parts In-Stock

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Lixinc

USA . 5,208 parts In-Stock

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Problanco Electronics

Mexico . 3,620 parts In-Stock

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Kulean Microsystems

USA . 2,518 parts In-Stock

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Corphita

USA . 2,427 parts In-Stock

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SupplyDigital Components

Austria . 1,340 parts In-Stock

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Argo Parts USA

USA . 792 parts In-Stock

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UHIMA Technologies

Türkiye . 508 parts In-Stock

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508

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Corohmni

South Africa . 166 parts In-Stock

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Overview

Discover the unparalleled performance and reliability of the MURA220T3 diode by Onsemi. With its high voltage ultra-fast recovery power application, this diode is perfect for a wide range of electronic devices. Manufactured by Onsemi, a trusted leader in the industry, you can trust in the quality and durability of this product. Experience the value and benefits of the MURA220T3, offering maximum output current of 2A and maximum repetitive peak reverse voltage of 200V. Upgrade your electronics with the MURA220T3 and enjoy superior performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various systems.

Surface Mount: YES

Surface mount capability allows for easy installation onto circuit boards, saving space and simplifying manufacturing processes.

Maximum Reverse Recovery Time: 0.035 us

The ultra-fast reverse recovery time ensures efficient operation and minimal power loss in high voltage applications.

Package Shape: RECTANGULAR

Rectangular shape enables easy placement and alignment within circuit designs, improving overall functionality.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of error during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs, ideal for applications where size is a concern.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Designed specifically for high voltage ultra fast recovery power applications, ensuring reliable performance in demanding scenarios.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand a range of environmental conditions without compromising performance.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good conductivity and solderability for secure connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit installation and ensures proper connectivity in different orientations.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds at peak reflow temperature allows for efficient soldering and assembly processes.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures secure solder joints and reliable performance under thermal stress.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC power in various electronic systems, making it a versatile choice.

Maximum Forward Voltage (VF): 0.77 V

Low forward voltage minimizes power loss and heat generation, improving efficiency in power conversion applications.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode can handle moderate power loads effectively.

Terminal Form: C BEND

C Bend terminal form allows for easy and secure connections, ensuring stability in demanding operating conditions.

Maximum Repetitive Peak Reverse Voltage: 200 V

High repetitive peak reverse voltage rating provides protection against voltage spikes and surges, enhancing reliability.

Maximum Non Repetitive Peak Forward Current: 135 A

High non-repetitive peak forward current rating allows the diode to handle sudden current surges without damage, ensuring robust performance.

Diode Element Material: SILICON

Silicon diode element material offers excellent electrical properties, reliability, and performance, making it a common choice for various applications.

Technical Specifications

Diodes & Rectifiers MURA220T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.77 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURA220T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-612-5580, 5961016125580

NIIN

016125580

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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