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MURA220T3G

Onsemi

MURA220T3G by Onsemi

MURA220T3G by Onsemi is a single diode with a reverse test voltage of 200V and max forward voltage of 0.95V. It is designed for high voltage ultra-fast recovery power applications, operating b/w -65 to 175 °C, with a max reverse recovery time of 0.035 us.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 7,548 parts In-Stock

1+ parts

$0.488

100+ parts

$0.241

1k+ parts

$0.158

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7,548

$0.488

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Mouser Electronics

USA . 20 parts In-Stock

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$0.640

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$0.229

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$0.139

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20

$0.640

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$0.139

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Future Electronics

Canada . 840,000 parts In-Stock

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$0.085

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Avnet

USA . 365,000 parts In-Stock

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Chip1Stop

Japan . 310,000 parts In-Stock

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Verical

USA . 38,800 parts In-Stock

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Rochester

USA . 38,800 parts In-Stock

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$0.115

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$0.096

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$0.085

38,800

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$0.115

$0.096

$0.085

Arrow

USA . 25,000 parts In-Stock

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Element14

Singapore . 14,018 parts In-Stock

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$0.314

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$0.190

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$0.144

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Farnell

UK . 13,248 parts In-Stock

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$0.203

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$0.188

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DigiKey

USA . 10,000 parts In-Stock

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

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$0.155

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$0.155

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Maritex

Poland . 3,760 parts In-Stock

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$0.163

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$0.088

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$0.083

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$0.074

3,760

$0.163

$0.088

$0.083

$0.074

Digiode

USA . 2,097 parts In-Stock

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$0.380

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$0.380

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TME

Poland . 327 parts In-Stock

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$0.390

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$0.160

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$0.124

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327

$0.390

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$0.110

NAC Semi

USA . 840,000 parts In-Stock

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$0.174

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IBS Electronics

USA . 810,000 parts In-Stock

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Chip Stock

USA . 373,500 parts In-Stock

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Vyrian

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Semtec, LLC

USA . 23,898 parts In-Stock

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Flip Electronics

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Classic Components Corporation

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Sensible Micro Corp

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Cyclops Electronics Ltd

UK . 935 parts In-Stock

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Connect4Technologies Inc.

Canada . 591 parts In-Stock

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QIE Inc.

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ComSIT Distribution GmbH

Germany . 405 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 16 parts In-Stock

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Distributors (Availability)

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Decca Corp

Germany . 121,346 parts In-Stock

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$0.055

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$0.054

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$0.053

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121,346

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Semicontronic

India . 121,261 parts In-Stock

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Ampacity Inc.

Singapore . 111,427 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$0.061

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$0.058

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270

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Corohmni

South Africa . 397 parts In-Stock

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Aztec Data Supply Inc.

USA . 5,991 parts In-Stock

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$0.090

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Continental Prestige Electronics

USA . 3,237 parts In-Stock

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$0.135

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$0.132

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Argo Parts USA

USA . 2,131 parts In-Stock

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$0.135

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Aranea Global

USA . 500 parts In-Stock

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$0.146

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500

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Corphita

USA . 2,110 parts In-Stock

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RC Electronics

USA . 35,000 parts In-Stock

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Lixinc

USA . 12,722 parts In-Stock

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Infinite Electronics LLP (Excess)

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Robosynatics

Brazil . 9,474 parts In-Stock

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Lucentia Tech

USA . 9,474 parts In-Stock

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SupplyDigital Components

Austria . 5,975 parts In-Stock

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Kepictronics

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iodParts Technologies Inc.

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Kulean Microsystems

USA . 3,587 parts In-Stock

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GreenTree Electronics

Israel . 3,325 parts In-Stock

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Problanco Electronics

Mexico . 3,288 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 868 parts In-Stock

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TANS Electronics

Latvia . 105 parts In-Stock

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UHIMA Technologies

Türkiye . 84 parts In-Stock

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Overview

Experience the power of the MURA220T3G by Onsemi, a high-quality rectifier diode designed for high voltage ultra-fast recovery power applications. With a maximum reverse recovery time of just 0.035 us and a maximum output current of 2 A, this small outline diode offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, the MURA220T3G provides customers with the value and benefits they need to succeed in their projects. Whether you're working on industrial equipment or consumer electronics, this diode's superior quality and efficiency will help you achieve your goals with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation properties and helps in protecting the diode from external factors such as moisture and dust.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast reverse recovery time ensures quick switching operation, making it suitable for high voltage applications that require rapid response times.

Maximum Forward Voltage (VF): 0.95 V

Low forward voltage drop helps in reducing power loss in the circuit and improves efficiency of the diode.

Maximum Output Current: 2 A

High output current rating allows the diode to handle high power loads effectively, making it suitable for power applications.

Application: HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Specifically designed for high voltage applications requiring ultra fast recovery times, making it ideal for power electronics and switching circuits.

Technical Specifications

Diodes & Rectifiers MURA220T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

HIGH VOLTAGE ULTRA FAST RECOVERY POWER

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.95 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

135 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

2 uA

Maximum Reverse Recovery Time:

.035 us

Reverse Test Voltage:

200 V

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURA220T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-662-8544, 5961016628544

NIIN

016628544

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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