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MURA215T3

Onsemi

MURA215T3 by Onsemi

MURA215T3 by Onsemi is a single rectifier diode with a max output current of 2A and peak repetitive reverse voltage of 150V. It operates b/w -65 to 175°C, making it suitable for various applications requiring high-speed switching in small outline packages. The diode's 0.035us reverse recovery time and 0.77V forward voltage make it ideal for surface mount designs.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 830 parts In-Stock

1+ parts

-

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$0.066

1k+ parts

$0.055

10k+ parts

$0.049

830

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$0.066

$0.055

$0.049

Distributors (In-Stock)

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Digiode

USA . 1,800 parts In-Stock

1+ parts

$0.051

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-

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1,800

$0.051

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Bristol Electronics

USA . 5,000 parts In-Stock

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5,000

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Vyrian

USA . 633 parts In-Stock

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633

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.020

100+ parts

$0.018

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$0.016

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-

10

$0.020

$0.018

$0.016

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Ampacity Inc.

Singapore . 758 parts In-Stock

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$0.046

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758

$0.046

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Corphita

USA . 2,389 parts In-Stock

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$0.049

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2,389

$0.049

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Corohmni

South Africa . 322 parts In-Stock

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$0.054

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322

$0.054

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Aztec Data Supply Inc.

USA . 800 parts In-Stock

1+ parts

$0.074

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800

$0.074

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AZTECH Wire

Italy . 751 parts In-Stock

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$7.090

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751

$7.090

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Kulean Microsystems

USA . 6,289 parts In-Stock

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TANS Electronics

Latvia . 5,748 parts In-Stock

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Problanco Electronics

Mexico . 2,702 parts In-Stock

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Continental Prestige Electronics

USA . 1,537 parts In-Stock

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1,537

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Argo Parts USA

USA . 1,315 parts In-Stock

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UHIMA Technologies

Türkiye . 925 parts In-Stock

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SupplyDigital Components

Austria . 444 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Discover the power of the MURA215T3 diode by Onsemi, a top-tier manufacturer in the industry. This small yet mighty rectifier diode offers unparalleled quality and reliability, making it perfect for a wide range of applications. From power supplies to battery chargers, this diode provides efficient power management solutions with its high output current and low forward voltage. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Say goodbye to power fluctuations and hello to seamless performance with the MURA215T3 diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability allows for easier and more efficient assembly onto circuit boards, saving space and reducing overall manufacturing costs.

Maximum Reverse Recovery Time: 0.035 us

The low reverse recovery time ensures fast switching speed and efficiency in electronic devices.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions and high power loads.

Maximum Forward Voltage (VF): 0.77 V

The low forward voltage drop helps in minimizing power losses and improving overall efficiency in the circuit.

Technical Specifications

Diodes & Rectifiers MURA215T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.77 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA215T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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