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MURA205T3

Onsemi

MURA205T3 by Onsemi

MURA205T3 by Onsemi is a single rectifier diode with a max output current of 2A and forward voltage of 0.74V. It has a peak repetitive reverse voltage of 50V, making it suitable for applications requiring high efficiency in small outline packages. The diode's plastic/epoxy body material and dual terminal position enhance its durability and versatility in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semi Source

USA . 25,880 parts In-Stock

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25,880

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Chip Stock

USA . 24,800 parts In-Stock

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24,800

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Vyrian

USA . 8,650 parts In-Stock

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8,650

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Speed Components Ltd

Israel . 4,500 parts In-Stock

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4,500

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Digiode

USA . 2,271 parts In-Stock

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2,271

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Distributors (Availability)

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AZTECH Wire

Italy . 656 parts In-Stock

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$8.070

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656

$8.070

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RC Electronics

USA . 180,000 parts In-Stock

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180,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Kulean Microsystems

USA . 8,067 parts In-Stock

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Problanco Electronics

Mexico . 6,605 parts In-Stock

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TANS Electronics

Latvia . 4,171 parts In-Stock

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SupplyDigital Components

Austria . 3,190 parts In-Stock

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Corphita

USA . 1,266 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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Corohmni

South Africa . 407 parts In-Stock

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407

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Overview

Enhance your electronic projects with the MURA205T3 diode by Onsemi, a top-quality manufacturer known for producing reliable components. This single-configured rectifier diode is perfect for a wide range of applications, offering a maximum output current of 2A and a maximum repetitive peak reverse voltage of 50V. With a sleek rectangular package design and dual terminal position, this diode is not only easy to use but also provides exceptional performance. Trust in Onsemi's expertise and elevate your projects today with the MURA205T3 diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, ideal for electronic devices that require compact and long-lasting components.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easy for engineers to incorporate into their systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Reverse Recovery Time: 30 us

Fast reverse recovery time ensures efficient and responsive switching performance in high-speed applications.

Package Shape: RECTANGULAR

Rectangular shape allows for space-saving installation, making it suitable for devices with limited board space.

No. of Terminals: 2

Having only two terminals simplifies the connection process, reducing the risk of wiring errors.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without compromising performance, ensuring reliability in various environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity, facilitating a secure and efficient electrical connection.

Terminal Position: DUAL

Dual terminal position provides versatility in circuit design, allowing for different wiring configurations.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable solder joints during assembly, preventing premature failures in the field.

Diode Type: RECTIFIER DIODE

Rectifier diode is specifically designed for converting AC to DC, making it suitable for power supply applications.

Maximum Forward Voltage (VF): 0.74 V

Low forward voltage drop minimizes power loss and heat generation, improving overall efficiency of the circuit.

Maximum Output Current: 2 A

High maximum output current capability allows for handling of larger loads, making it suitable for power-intensive applications.

Terminal Form: C BEND

C bend terminal form ensures secure and reliable solder joints, enhancing the durability and longevity of the diode.

Maximum Repetitive Peak Reverse Voltage: 50 V

With a high maximum repetitive peak reverse voltage, the diode can withstand reverse polarity conditions, enhancing reliability in the circuit.

Maximum Non Repetitive Peak Forward Current: 50 A

High maximum non repetitive peak forward current capacity allows for handling of short-duration high current spikes, improving overall robustness of the diode.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and electrical properties, ensuring consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers MURA205T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Recovery Time:

30 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA205T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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