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MURA120T3

Onsemi

MURA120T3 by Onsemi

MURA120T3 by Onsemi is a single rectifier diode with a max output current of 2A and a max repetitive peak reverse voltage of 200V. It operates in temperatures ranging from -65 to 175 °C, making it suitable for various electronic applications requiring high-speed switching capabilities in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 415,500 parts In-Stock

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Vyrian

USA . 10,606 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 5,000 parts In-Stock

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Digiode

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Prism Electronics

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AZTECH Wire

Italy . 1,026 parts In-Stock

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$14.500

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TANS Electronics

Latvia . 8,285 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 3,189 parts In-Stock

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Kepictronics

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,074 parts In-Stock

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Corphita

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South Africa . 406 parts In-Stock

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UHIMA Technologies

Türkiye . 214 parts In-Stock

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Overview

Boost your electronics projects with the MURA120T3 diode by Onsemi. Known for their high-quality components, Onsemi ensures reliable performance and durability in every product. The MURA120T3 is a versatile rectifier diode that can handle up to 2A of output current with a maximum forward voltage of 0.71V. Whether you're working on power supplies, battery chargers, or voltage regulators, this diode is a must-have for efficient and effective circuit design. Trust Onsemi to deliver superior quality and performance for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation properties and durability, making the diode more reliable in long-term usage.

Config: SINGLE

Single configuration is suitable for simple circuit designs, making it easier to integrate into various electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Recovery Time: 0.035 us

Low reverse recovery time enables fast switching speeds and efficient performance in rectification applications.

Package Shape: RECTANGULAR

Rectangular shape ensures easy handling and placement on circuit boards, enhancing overall installation convenience.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing chances of errors during installation.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the PCB, enabling more efficient use of board real estate.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range ensures stable performance even in demanding environmental conditions.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for reliable operation in extreme cold environments without performance degradation.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability and conductivity, ensuring secure connections in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexibility in orientation during installation, accommodating different PCB layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time minimizes the risk of thermal damage during soldering, preserving the diode's performance.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance ensures reliable soldering without compromising the diode's structural integrity.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC current with low forward voltage drop, ensuring efficient power conversion.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop minimizes power losses and increases the efficiency of the rectification process.

Maximum Output Current: 2 A

High output current rating allows the diode to handle a significant amount of current, making it suitable for various power applications.

Terminal Form: C BEND

C bend terminal form provides mechanical stability and secure mounting, enhancing the diode's overall durability.

Maximum Repetitive Peak Reverse Voltage: 200 V

High reverse voltage rating ensures reliable performance in rectification applications, protecting the diode from voltage spikes.

Maximum Non Repetitive Peak Forward Current: 40 A

High non-repetitive peak forward current handling capability allows the diode to withstand short-term current surges without damage.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and electrical properties, ensuring consistent performance over time.

Technical Specifications

Diodes & Rectifiers MURA120T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MURA120T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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