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MURA115T3

Onsemi

MURA115T3 by Onsemi

MURA115T3 by Onsemi is a single rectifier diode with a max output current of 2A and peak repetitive reverse voltage of 150V. It has a fast reverse recovery time of 0.035us, making it suitable for high-speed applications in electronics requiring efficient power management. The diode's small outline package and surface-mount capability make it ideal for compact designs where space is limited.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 155 parts In-Stock

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-

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$0.132

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$0.110

10k+ parts

$0.098

155

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$0.132

$0.110

$0.098

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Digiode

USA . 2,210 parts In-Stock

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$0.103

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Chip Stock

USA . 48,000 parts In-Stock

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Lantek

USA . 10,000 parts In-Stock

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Vyrian

USA . 6,819 parts In-Stock

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NPI Materials, Inc.

USA . 4,498 parts In-Stock

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R&J Components

USA . 1,785 parts In-Stock

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Bristol Electronics

USA . 1,480 parts In-Stock

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1,480

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Atlantic Semiconductor

USA . 1,480 parts In-Stock

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.033

100+ parts

$0.030

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$0.027

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200

$0.033

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$0.027

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Corphita

USA . 2,397 parts In-Stock

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$0.097

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Corohmni

South Africa . 106 parts In-Stock

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$0.108

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AZTECH Wire

Italy . 830 parts In-Stock

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$19.190

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SupplyDigital Components

Austria . 7,872 parts In-Stock

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Assy Fe

Spain . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,337 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

Mexico . 1,487 parts In-Stock

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Perfect Parts

USA . 380 parts In-Stock

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380

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Enhance your electronic designs with the MURA115T3 diode by Onsemi. Manufactured with precision and expertise, this rectifier diode offers superior performance and reliability. Whether you're working on power supplies, battery chargers, or motor control applications, this diode is the perfect choice. With a low forward voltage of 0.71V and a maximum output current of 2A, it provides exceptional value and efficiency for your projects. Trust Onsemi for quality components that elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for long-lasting performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Reverse Recovery Time: 0.035 us

Efficient operation with fast reverse recovery time.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for strong connections.

Diode Type: RECTIFIER DIODE

Suitable for converting AC to DC power in various electronic applications.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop for efficient energy conversion.

Maximum Output Current: 2 A

Can handle moderate to high current loads with ease.

Maximum Repetitive Peak Reverse Voltage: 150 V

Can withstand high reverse voltages for reliable operation.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode construction.

Technical Specifications

Diodes & Rectifiers MURA115T3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

40 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MURA115T3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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