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MPS5172RLRE

Onsemi

MPS5172RLRE by Onsemi

MPS5172RLRE by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high gain. Package style is cylindrical with through-hole terminals, making it suitable for various circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 961 parts In-Stock

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Digiode

USA . 331 parts In-Stock

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Problanco Electronics

Mexico . 5,402 parts In-Stock

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Kulean Microsystems

USA . 4,031 parts In-Stock

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TANS Electronics

Latvia . 2,009 parts In-Stock

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SupplyDigital Components

Austria . 823 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Corphita

USA . 219 parts In-Stock

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UHIMA Technologies

Türkiye . 67 parts In-Stock

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Overview

Unleash the power of innovation with the MPS5172RLRE by Onsemi, a top-tier manufacturer known for its superior quality and cutting-edge technology. As a Small Signal Bipolar Junction Transistor (BJT), this NPN transistor offers unparalleled performance in a variety of applications. From amplifiers to signal processing circuits, this product delivers unmatched reliability and efficiency. Experience the value of precision engineering with the MPS5172RLRE, providing customers with exceptional benefits and advantages that will elevate any project to new heights. Make the smart choice and choose Onsemi for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ensuring long-lasting performance and easy handling of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor versatile for various electronic circuits.

Configuration: SINGLE

Simplified design with single configuration, making it easy to integrate into circuits without complexity.

Package Shape: ROUND

Compact round shape allows for easy placement and space-saving in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering onto circuit boards.

No. of Terminals: 3

Simple 3-terminal setup for basic transistor functionality, ideal for straightforward circuit designs.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers uniformity and standardization in dimensions, ensuring compatibility with various mounting and assembly methods.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures consistent amplification performance in electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

Capable of handling up to 25 V collector-emitter voltage, suitable for low to medium voltage applications.

Transistor Element Material: SILICON

Silicon-based transistor element provides good conductivity and reliability, ensuring stable performance over time.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents up to 0.1 A, suitable for low-power circuits and applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity for reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies circuit board layout and connection, making it easier to incorporate into circuit designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS5172RLRE attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

MPS5172RLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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