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MPS5172RL1

Onsemi

MPS5172RL1 by Onsemi

MPS5172RL1 by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high gain. Suitable for use in various circuits requiring a single NPN transistor configuration.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,497 parts In-Stock

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Vyrian

USA . 151 parts In-Stock

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Problanco Electronics

Mexico . 8,054 parts In-Stock

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TANS Electronics

Latvia . 7,978 parts In-Stock

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SupplyDigital Components

Austria . 4,726 parts In-Stock

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Kulean Microsystems

USA . 3,246 parts In-Stock

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UHIMA Technologies

Türkiye . 464 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Corphita

USA . 209 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality MPS5172RL1 Small Signal Bipolar Junction Transistor by Onsemi. Manufactured by a trusted industry leader, this NPN transistor offers reliable performance and durability in a variety of applications. With a minimum DC current gain of 100 and a maximum collector-emitter voltage of 25V, this transistor provides value and efficiency for your circuit designs. Trust Onsemi to deliver top-notch components for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility.

Configuration: SINGLE

Simplifies circuit design and integration, ideal for straightforward applications.

Package Shape: ROUND

Facilitates easy mounting and alignment in circular layouts, enhancing installation convenience.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections on PCBs, ensuring stable performance.

No. of Terminals: 3

Provides necessary connections for basic transistor functions, suitable for simple circuit designs.

Package Style (Meter): CYLINDRICAL

Compact and space-efficient design, allowing for versatile placement in electronic setups.

Minimum DC Current Gain (hFE): 100

High hFE value ensures consistent and reliable amplification performance in circuits.

Maximum Operating Temperature: 150 °C

Wide temperature range tolerance for operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 25 V

Suitable for low voltage applications, ensuring safe and efficient transistor operation.

Transistor Element Material: SILICON

Silicon-based material offers high performance and reliability for the transistor's semiconductor element.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels, making it suitable for low-power electronics applications.

Terminal Finish: TIN LEAD

Lead finish for easy soldering and connections, enhancing assembly efficiency.

Terminal Position: BOTTOM

Bottom terminal position for convenient PCB mounting and integration.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPS5172RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

MPS5172RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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