Loading...

MMBZ6V2ALT3G

Onsemi

MMBZ6V2ALT3G by Onsemi

MMBZ6V2ALT3G by Onsemi is a Zener Transient Voltage Suppressor diode with 6.2V breakdown voltage, 24W peak power dissipation, and common anode configuration. Ideal for protecting electronic circuits from voltage spikes in applications like automotive electronics and industrial control systems.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

2,000

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 878 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

878

$0.041

-

-

-

Chip Stock

USA . 76,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76,000

-

-

-

-

Vyrian

USA . 10,074 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,074

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,511 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,511

$0.039

-

-

-

Component Stockers USA

USA . 2,797 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

-

2,797

$0.040

$0.040

$0.040

-

Corohmni

South Africa . 256 parts In-Stock

1+ parts

$0.043

100+ parts

-

1k+ parts

-

10k+ parts

-

256

$0.043

-

-

-

AZTECH Wire

Italy . 840 parts In-Stock

1+ parts

$12.800

100+ parts

-

1k+ parts

-

10k+ parts

-

840

$12.800

-

-

-

TANS Electronics

Latvia . 5,058 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,058

-

-

-

-

Kulean Microsystems

USA . 4,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,759

-

-

-

-

SupplyDigital Components

Austria . 4,645 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,645

-

-

-

-

Problanco Electronics

Mexico . 3,037 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,037

-

-

-

-

UHIMA Technologies

Türkiye . 494 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

494

-

-

-

-

Overview

Experience unmatched quality and reliability with the MMBZ6V2ALT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior Transient Suppression Devices that provide exceptional protection for your electronics. Whether you're looking to safeguard sensitive circuits or prevent voltage spikes, this product offers unparalleled value and performance. Trust in the advanced ZENER technology and common anode configuration to keep your devices safe and running smoothly. Upgrade to the MMBZ6V2ALT3G today and enjoy peace of mind knowing your equipment is in good hands.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for effective transient suppression and reliable voltage clamping.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, especially for compact electronic devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

The high power dissipation capacity ensures that the device can handle sudden voltage spikes without getting damaged.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2 V provides effective protection against overvoltage situations.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic systems and circuit designs.

No. of Terminals: 3

Having 3 terminals provides flexibility in connectivity and ensures stable connections.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that the device can function in a wide range of temperature conditions.

Terminal Finish: TIN

The tin finish on the terminals ensures good conductivity and resistance to corrosion.

Terminal Position: DUAL

The dual terminal position provides redundancy and ensures stable connections for effective transient suppression.

Maximum Power Dissipation: 0.225 W

The maximum power dissipation of 0.225 W ensures efficient energy handling and protection under transient conditions.

Minimum Breakdown Voltage: 5.89 V

The minimum breakdown voltage of 5.89 V provides a safety margin to protect against voltage surges.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature allows for quick and precise assembly during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and bonding of the components during assembly.

Maximum Breakdown Voltage: 6.51 V

The maximum breakdown voltage of 6.51 V provides additional protection against high voltage transients.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode design ensures efficient transient suppression and voltage clamping capabilities.

Technology: ZENER

The Zener technology allows for precise voltage regulation and efficient transient suppression in the device.

Terminal Form: GULL WING

The gull wing terminal form provides reliable connections and easy soldering during installation.

No. of Elements: 2

Having 2 elements enhances the transient suppression capabilities of the device for better protection against voltage spikes.

Maximum Repetitive Peak Reverse Voltage: 3 V

The maximum repetitive peak reverse voltage of 3 V ensures continuous protection against reverse voltage conditions.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only allows current flow in one direction, providing effective transient suppression.

Maximum Clamping Voltage: 8.7 V

The maximum clamping voltage of 8.7 V ensures that the device can effectively limit voltage spikes to a safe level.

Diode Element Material: SILICON

The silicon material used in the diode elements provides efficient voltage regulation and transient suppression capabilities.

Technical Specifications

Transient Suppression Devices MMBZ6V2ALT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

6.51 V

Minimum Breakdown Voltage:

5.89 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

8.7 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ6V2ALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20