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MMBZ6V8AL-7-F

Diodes Incorporated

MMBZ6V8AL-7-F by Diodes Incorporated

Diodes Inc. MMBZ6V8AL-7-F is a transient suppression device with 6.8V breakdown voltage, 24W peak reverse power dissipation, and 9.6V clamping voltage. Commonly used in electronic circuits for surge protection due to its avalanche technology and unidirectional polarity.

Median Price

$0.518

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

$0.098

100+ parts

-

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700

$0.098

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Bristol Electronics

USA . 2,676 parts In-Stock

1+ parts

$0.938

100+ parts

$0.347

1k+ parts

$0.244

10k+ parts

-

2,676

$0.938

$0.347

$0.244

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Chip Stock

USA . 30,891 parts In-Stock

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30,891

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Vyrian

USA . 3,739 parts In-Stock

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3,739

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Prism Electronics

USA . 19 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 52 parts In-Stock

1+ parts

$0.035

100+ parts

-

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52

$0.035

-

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Continental Prestige Electronics

USA . 3,922 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

3,922

$0.071

-

-

$0.070

Argo Parts USA

USA . 3,450 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

3,450

$0.071

-

-

$0.069

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.116

100+ parts

$0.106

1k+ parts

$0.095

10k+ parts

-

200

$0.116

$0.106

$0.095

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Aztec Data Supply Inc.

USA . 1,890 parts In-Stock

1+ parts

$0.180

100+ parts

-

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1,890

$0.180

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Benley Electronics

USA . 3 parts In-Stock

1+ parts

$1.000

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3

$1.000

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Decca Corp

Germany . 1,086 parts In-Stock

1+ parts

$2.010

100+ parts

$1.970

1k+ parts

$1.950

10k+ parts

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1,086

$2.010

$1.970

$1.950

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Ampacity Inc.

Singapore . 1,019 parts In-Stock

1+ parts

$2.010

100+ parts

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1,019

$2.010

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Semicontronic

India . 865 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

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865

$2.010

$1.960

$1.950

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Andel Nordic

Denmark . 2,658 parts In-Stock

1+ parts

$4.300

100+ parts

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1k+ parts

$4.128

10k+ parts

$4.128

2,658

$4.300

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$4.128

$4.128

AZTECH Wire

Italy . 369 parts In-Stock

1+ parts

$16.336

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369

$16.336

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Legend Electronics Inc. (Excess)

USA . 240,279 parts In-Stock

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240,279

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RC Electronics

USA . 149,043 parts In-Stock

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$0.070

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$0.070

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$0.060

149,043

-

$0.070

$0.070

$0.060

Perfect Parts

USA . 89,859 parts In-Stock

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89,859

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Kepictronics

USA . 32,000 parts In-Stock

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32,000

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Assy Fe

Spain . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,221 parts In-Stock

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2,221

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.096

1k+ parts

$0.093

10k+ parts

$0.091

2,000

-

$0.096

$0.093

$0.091

Lixinc

USA . 1,941 parts In-Stock

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1,941

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Robosynatics

Brazil . 450 parts In-Stock

1+ parts

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100+ parts

$27.242

1k+ parts

$27.242

10k+ parts

$27.242

450

-

$27.242

$27.242

$27.242

Lucentia Tech

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$27.242

1k+ parts

$27.242

10k+ parts

$27.242

450

-

$27.242

$27.242

$27.242

Overview

Discover the MMBZ6V8AL-7-F by Diodes Incorporated, a top-of-the-line Transient Suppression Device designed to protect your electronic components from voltage spikes. With a common anode configuration and two elements, this small outline package is perfect for surface mount applications. Offering a nominal breakdown voltage of 6.8V and maximum clamping voltage of 9.6V, this diode ensures reliable protection against power surges. Trust in Diodes Incorporated's expertise in semiconductor technology to safeguard your devices with the MMBZ6V8AL-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the components inside, making this product reliable and long-lasting.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration allows for easy integration into circuits, and having 2 elements provides redundancy and backup protection.

Surface Mount: YES

Surface mount capability makes it easy to install and saves space on the circuit board.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

High power dissipation capability ensures that the device can handle large surges without damage.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage is ideal for protecting sensitive components in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can function reliably even in harsh environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for use in a wide range of temperature conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good connectivity and resistance to corrosion.

Terminal Position: DUAL

Dual terminal position allows for flexible installation options in different circuit layouts.

Maximum Power Dissipation: 0.225 W

Lower power dissipation ensures that the device does not overheat during operation.

Minimum Breakdown Voltage: 6.46 V

Having a minimum breakdown voltage close to the nominal value ensures consistent protection.

Maximum Breakdown Voltage: 7.14 V

Having a maximum breakdown voltage slightly higher than the nominal value offers an added margin of safety.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed for transient suppression and provides effective protection.

Technology: AVALANCHE

Avalanche technology allows for quick response to transient surges, providing rapid protection to the circuit.

Maximum Clamping Voltage: 9.6 V

The maximum clamping voltage ensures that the voltage across the protected circuit remains within safe limits.

Technical Specifications

Transient Suppression Devices MMBZ6V8AL-7-F attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.46 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

9.6 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

4.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ6V8AL-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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