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MMBZ9V1ALT1G

Onsemi

MMBZ9V1ALT1G by Onsemi

MMBZ9V1ALT1G by Onsemi is a Zener Trans Voltage Suppressor Diode with 2 elements. It has a breakdown voltage of 9.56 V, clamping voltage of 14 V, and max power dissipation of 0.225 W. Ideal for transient suppression in electronic circuits operating b/w -55 to 150 °C.

Median Price

$0.057

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,920 parts In-Stock

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$0.027

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$0.027

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$0.027

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Arrow

USA . 25,422 parts In-Stock

1+ parts

$0.071

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$0.044

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$0.035

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$0.029

25,422

$0.071

$0.044

$0.035

$0.029

DigiKey

USA . 6 parts In-Stock

1+ parts

$0.240

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$0.089

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$0.057

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6

$0.240

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Mouser Electronics

USA . 1,000 parts In-Stock

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$0.250

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$0.084

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$0.049

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$0.044

1,000

$0.250

$0.084

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$0.044

Future Electronics

Canada . 210,000 parts In-Stock

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Farnell

UK . 39,424 parts In-Stock

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Element14

Singapore . 39,424 parts In-Stock

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EBV Elektronik

Germany . 33,000 parts In-Stock

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Chip1Stop

Japan . 29,877 parts In-Stock

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Verical

USA . 25,422 parts In-Stock

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Flip Electronics (Authorized)

USA . 4,195 parts In-Stock

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Flip Electronics

USA . 4,195 parts In-Stock

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Digiode

USA . 975 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.059

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50

$0.059

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Maritex

Poland . 228 parts In-Stock

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$0.152

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$0.036

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$0.025

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$0.021

228

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$0.021

IBS Electronics

USA . 987,000 parts In-Stock

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Vyrian

USA . 40,794 parts In-Stock

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Chip Stock

USA . 36,894 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 11,829 parts In-Stock

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Sensible Micro Corp

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TME

Poland . 7,275 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,052 parts In-Stock

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ComSIT USA

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Martec Srl

Italy . 505 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Bristol Electronics

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Atlantic Semiconductor

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J2 Sourcing AB

Sweden . 15 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 41,978 parts In-Stock

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$0.018

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Semicontronic

India . 40,519 parts In-Stock

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$0.018

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40,519

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Corohmni

South Africa . 370 parts In-Stock

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Corphita

USA . 204 parts In-Stock

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Argo Parts USA

USA . 4,913 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,321 parts In-Stock

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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Continental Prestige Electronics

USA . 41,874 parts In-Stock

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Perfect Parts

USA . 788,795 parts In-Stock

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RC Electronics

USA . 128,951 parts In-Stock

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Futuretech Components

Singapore . 45,000 parts In-Stock

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Eastek

USA . 27,000 parts In-Stock

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Robosynatics

Brazil . 14,544 parts In-Stock

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Lucentia Tech

USA . 14,544 parts In-Stock

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$0.180

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SupplyDigital Components

Austria . 6,829 parts In-Stock

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TANS Electronics

Latvia . 2,890 parts In-Stock

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Kulean Microsystems

USA . 2,771 parts In-Stock

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Problanco Electronics

Mexico . 955 parts In-Stock

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UHIMA Technologies

Türkiye . 875 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 471 parts In-Stock

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Glotronic Ltd.

UK . 377 parts In-Stock

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Bastille Electronics

Australia . 82 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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Authorized Procurement Solutions

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Overview

Enhance your electronic devices with the MMBZ9V1ALT1G by Onsemi, a top-tier manufacturer known for its high-quality transient suppression devices. This product, with its common anode configuration and two elements, offers superior protection against voltage spikes, ensuring the longevity of your equipment. Whether you're in the automotive, telecommunications, or industrial sector, this small outline package delivers unmatched performance with a nominal breakdown voltage of 9.1 V and maximum clamping voltage of 14 V. Trust in Onsemi's expertise and elevate your applications with the MMBZ9V1ALT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for effective transient suppression and protection against voltage spikes in electronic circuits.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

High maximum non-repetitive peak reverse power dissipation ensures reliable performance even under high transient conditions, protecting sensitive electronics.

Nominal Breakdown Voltage: 9.1 V

The nominal breakdown voltage of 9.1 V provides effective overvoltage protection for sensitive components in the circuit.

Maximum Reverse Current: 0.3 uA

Low maximum reverse current ensures minimal leakage and power loss in the circuit during normal operation.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on the PCB, saving space and facilitating automated assembly processes.

Minimum Operating Temperature: -55 °C

Wide operating temperature range from -55°C to 150°C ensures reliable performance in extreme environmental conditions.

Maximum Clamping Voltage: 14 V

The maximum clamping voltage of 14 V ensures that the protected components are not exposed to voltage levels that could cause damage.

Technical Specifications

Transient Suppression Devices MMBZ9V1ALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

9.56 V

Minimum Breakdown Voltage:

8.65 V

Nominal Breakdown Voltage:

9.1 V

Maximum Clamping Voltage:

14 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

6 V

Maximum Reverse Current:

.3 uA

Reverse Test Voltage:

6 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ9V1ALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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