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MMBZ33VALT1G

Onsemi

MMBZ33VALT1G by Onsemi

MMBZ33VALT1G by Onsemi is a Zener diode with 33V breakdown voltage, 40W power dissipation, and 0.05uA reverse current. Commonly used in transient suppression applications due to its small outline package and unidirectional polarity for protecting circuits from voltage spikes. Operating temperature ranges from -55°C to 150°C making it suitable for various electronic devices.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

32

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 200,915 parts In-Stock

1+ parts

$0.190

100+ parts

$0.051

1k+ parts

$0.045

10k+ parts

$0.037

200,915

$0.190

$0.051

$0.045

$0.037

EBV Elektronik

Germany . 3,879,000 parts In-Stock

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USA . 1,818,000 parts In-Stock

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Chip1Stop

Japan . 747,000 parts In-Stock

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Newark

USA . 441,000 parts In-Stock

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Verical

USA . 120,000 parts In-Stock

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Master Electronics

USA . 120,000 parts In-Stock

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Arrow

USA . 90,000 parts In-Stock

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DigiKey

USA . 54,350 parts In-Stock

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Future Electronics

Canada . 30,000 parts In-Stock

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Rochester

USA . 27,000 parts In-Stock

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$0.032

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$0.027

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Element14

Singapore . 15,423 parts In-Stock

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Farnell

UK . 15,423 parts In-Stock

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RS (Exports)

UK . 4,850 parts In-Stock

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$0.090

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Distributors (In-Stock)

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Digiode

USA . 908 parts In-Stock

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Freelance Electronics

USA . 21 parts In-Stock

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$0.093

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Maritex

Poland . 28,883 parts In-Stock

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$0.363

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$0.073

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$0.043

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$0.032

28,883

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$0.073

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$0.032

Nova Conductors

Japan . 1,000 parts In-Stock

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IBS Electronics

USA . 4,593,000 parts In-Stock

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NAC Semi

USA . 2,568,000 parts In-Stock

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Flip Electronics

USA . 1,818,000 parts In-Stock

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Vyrian

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Chip Stock

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

Germany . 4,060 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,960 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

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Classic Components Corporation

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Atlantic Semiconductor

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EMSNET

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Lantek

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Ampacity Inc.

Singapore . 384,411 parts In-Stock

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Semicontronic

India . 368,724 parts In-Stock

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Corohmni

South Africa . 391 parts In-Stock

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Corphita

USA . 1,097 parts In-Stock

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Argo Parts USA

USA . 1,326 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,388 parts In-Stock

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Component Stockers USA

USA . 358,755 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.980

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Perfect Parts

USA . 4,137,594 parts In-Stock

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GreenTree Electronics

Israel . 363,000 parts In-Stock

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Metaverse IC Inc.

Canada . 165,000 parts In-Stock

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Epart123

USA . 120,000 parts In-Stock

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RC Electronics

USA . 106,642 parts In-Stock

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Eastek

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Kepictronics

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Continental Prestige Electronics

USA . 44,470 parts In-Stock

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Allen Electronics Distributors

USA . 11,100 parts In-Stock

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TANS Electronics

Latvia . 8,307 parts In-Stock

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SupplyDigital Components

Austria . 5,094 parts In-Stock

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Problanco Electronics

Mexico . 4,665 parts In-Stock

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S.R.D Solutions

India . 2,900 parts In-Stock

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USA . 2,830 parts In-Stock

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Authorized Procurement Solutions

USA . 2,632 parts In-Stock

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Lixinc

USA . 2,499 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,400 parts In-Stock

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Futuretech Components

Singapore . 960 parts In-Stock

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UHIMA Technologies

Türkiye . 924 parts In-Stock

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Formix International (Excess)

India . 455 parts In-Stock

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Robosynatics

Brazil . 404 parts In-Stock

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Lucentia Tech

USA . 404 parts In-Stock

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Kulean Microsystems

USA . 295 parts In-Stock

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Overview

Discover the cutting-edge MMBZ33VALT1G by Onsemi, a top-tier manufacturer of Transient Suppression Devices. This innovative product offers exceptional protection against voltage spikes and surges, ensuring the safety of your electronic devices. Its small outline package design with dual terminals allows for easy installation in various applications. With a nominal breakdown voltage of 33V and maximum clamping voltage of 46V, this Zener diode technology provides reliable performance in a wide range of operating temperatures. Trust Onsemi to deliver quality products that prioritize durability and efficiency, making the MMBZ33VALT1G an invaluable asset for your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements allows for effective transient suppression in both directions, ensuring reliable performance.

Surface Mount: YES

With surface mount capability, this device can be easily integrated into circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

The high peak power dissipation rating ensures the device can handle sudden surges without damage, increasing its reliability.

Nominal Breakdown Voltage: 33 V

The nominal breakdown voltage of 33 V provides effective protection against voltage spikes, safeguarding sensitive components.

Maximum Reverse Current: 0.05 uA

The low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and secure mounting in electronic systems.

Reverse Test Voltage: 26 V

The reverse test voltage of 26 V ensures reliable performance under normal operating conditions.

No. of Terminals: 3

The 3 terminals provide secure connections and enable proper integration into circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-saving and suitable for compact electronic devices.

Technical Specifications

Transient Suppression Devices MMBZ33VALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

34.65 V

Minimum Breakdown Voltage:

31.35 V

Nominal Breakdown Voltage:

33 V

Maximum Clamping Voltage:

46 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

26 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

26 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ33VALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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