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MMBZ5V6ALT3G

Onsemi

MMBZ5V6ALT3G by Onsemi

MMBZ5V6ALT3G by Onsemi is a Zener diode with common anode configuration, 5.6 V breakdown voltage, and 24 W peak reverse power dissipation. Ideal for transient suppression in electronic circuits, it features a unidirectional polarity and can operate b/w -55 to 150 °C temperatures.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 20,158 parts In-Stock

1+ parts

$0.017

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$0.017

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-

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20,158

$0.017

$0.017

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Farnell

UK . 20,310 parts In-Stock

1+ parts

$0.099

100+ parts

$0.070

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-

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20,310

$0.099

$0.070

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Arrow

USA . 10,395 parts In-Stock

1+ parts

$0.120

100+ parts

$0.036

1k+ parts

$0.031

10k+ parts

$0.026

10,395

$0.120

$0.036

$0.031

$0.026

Element14

Singapore . 53,690 parts In-Stock

1+ parts

$0.174

100+ parts

$0.054

1k+ parts

$0.046

10k+ parts

$0.044

53,690

$0.174

$0.054

$0.046

$0.044

Mouser Electronics

USA . 1,774 parts In-Stock

1+ parts

$0.200

100+ parts

$0.084

1k+ parts

$0.049

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-

1,774

$0.200

$0.084

$0.049

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EBV Elektronik

Germany . 220,000 parts In-Stock

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220,000

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Future Electronics

Canada . 30,000 parts In-Stock

1+ parts

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$0.033

30,000

-

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$0.033

Chip1Stop

Japan . 24,350 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.037

10k+ parts

$0.028

24,350

-

$0.066

$0.037

$0.028

Avnet

USA . 20,000 parts In-Stock

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20,000

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Verical

USA . 10,395 parts In-Stock

1+ parts

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100+ parts

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$0.031

10k+ parts

$0.026

10,395

-

-

$0.031

$0.026

Rochester

USA . 5,359 parts In-Stock

1+ parts

-

100+ parts

$0.032

1k+ parts

$0.027

10k+ parts

$0.024

5,359

-

$0.032

$0.027

$0.024

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,373 parts In-Stock

1+ parts

$0.017

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2,373

$0.017

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.041

100+ parts

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900

$0.041

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TME

Poland . 220,000 parts In-Stock

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220,000

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NAC Semi

USA . 180,000 parts In-Stock

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$0.086

180,000

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$0.086

Chip Stock

USA . 164,500 parts In-Stock

1+ parts

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164,500

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IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

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$0.042

30,000

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$0.042

Vyrian

USA . 26,436 parts In-Stock

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26,436

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Distributors (Availability)

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Semicontronic

India . 25,404 parts In-Stock

1+ parts

$0.015

100+ parts

$0.015

1k+ parts

$0.015

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25,404

$0.015

$0.015

$0.015

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Corphita

USA . 669 parts In-Stock

1+ parts

$0.016

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669

$0.016

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Corohmni

South Africa . 367 parts In-Stock

1+ parts

$0.018

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367

$0.018

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Continental Prestige Electronics

USA . 2,800 parts In-Stock

1+ parts

$0.041

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$0.040

2,800

$0.041

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-

$0.040

Argo Parts USA

USA . 1,168 parts In-Stock

1+ parts

$0.041

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$0.040

1,168

$0.041

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$0.040

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.041

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$0.041

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1,000

$0.041

$0.041

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Ampacity Inc.

Singapore . 25,245 parts In-Stock

1+ parts

$0.046

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$0.046

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Aztec Data Supply Inc.

USA . 4,639 parts In-Stock

1+ parts

$0.090

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4,639

$0.090

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.124

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$0.117

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$0.117

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60

$0.124

$0.117

$0.117

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Component Stockers USA

USA . 12,762 parts In-Stock

1+ parts

$0.190

100+ parts

$0.070

1k+ parts

$0.040

10k+ parts

$0.020

12,762

$0.190

$0.070

$0.040

$0.020

Kepictronics

USA . 30,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Eastek

USA . 20,000 parts In-Stock

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Lixinc

USA . 17,250 parts In-Stock

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Metaverse IC Inc.

Canada . 8,697 parts In-Stock

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SupplyDigital Components

Austria . 6,624 parts In-Stock

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Problanco Electronics

Mexico . 2,538 parts In-Stock

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Kulean Microsystems

USA . 2,328 parts In-Stock

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2,328

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UHIMA Technologies

Türkiye . 956 parts In-Stock

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956

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TANS Electronics

Latvia . 951 parts In-Stock

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951

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Overview

Enhance your electronic devices with the MMBZ5V6ALT3G by Onsemi, a top-quality transient suppression device designed to protect against voltage spikes and surges. Manufactured by industry leader Onsemi, this product offers reliable performance and durability for a wide range of applications. With its common anode configuration and compact design, this device is easy to install and provides peace of mind knowing your electronics are safeguarded. Trust in the value and benefits that the MMBZ5V6ALT3G provides, ensuring optimal functionality and protection for your electronic circuits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight structure for the transient suppression device.

Config: COMMON ANODE, 2 ELEMENTS

Efficiently protects against transient voltage spikes with dual elements and common anode configuration.

Maximum Non Repetitive Peak Reverse Power Dissipation: 24 W

Allows for high power dissipation capability, ensuring reliable protection under extreme conditions.

Nominal Breakdown Voltage: 5.6 V

Maintains a consistent breakdown voltage to safeguard connected components within the specified limit.

Maximum Reverse Current: 5 uA

Provides low reverse current flow, preventing damage to sensitive electronics.

Maximum Operating Temperature: 150 °C

Suitable for use in a wide range of operating temperatures.

Minimum Operating Temperature: -55 °C

Ensures reliable performance even in cold environments.

Technical Specifications

Transient Suppression Devices MMBZ5V6ALT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

5.88 V

Minimum Breakdown Voltage:

5.32 V

Nominal Breakdown Voltage:

5.6 V

Maximum Clamping Voltage:

8 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

24 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ5V6ALT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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