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MMBZ27VCLT1G

Onsemi

MMBZ27VCLT1G by Onsemi

MMBZ27VCLT1G by Onsemi is a Zener technology Trans Voltage Suppressor Diode with 2 elements. It has a breakdown voltage of 27V, max clamping voltage of 38V, and can handle up to 40W non-repetitive peak reverse power dissipation. Commonly used in transient suppression applications due to its small outline package style and common cathode configuration.

Median Price

$0.047

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 23,772 parts In-Stock

1+ parts

$0.124

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$0.041

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$0.040

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23,772

$0.124

$0.041

$0.040

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DigiKey

USA . 87,522 parts In-Stock

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$0.200

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$0.077

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$0.049

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87,522

$0.200

$0.077

$0.049

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Mouser Electronics

USA . 414 parts In-Stock

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$0.200

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$0.077

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$0.040

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$0.038

414

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$0.077

$0.040

$0.038

Rochester

USA . 2,100,000 parts In-Stock

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$0.051

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$0.042

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$0.038

2,100,000

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$0.051

$0.042

$0.038

Verical

USA . 2,016,000 parts In-Stock

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Chip1Stop

Japan . 90,000 parts In-Stock

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Farnell

UK . 26,038 parts In-Stock

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Element14

Singapore . 26,038 parts In-Stock

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Flip Electronics (Authorized)

USA . 21,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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Freelance Electronics

USA . 285 parts In-Stock

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Digiode

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Nova Conductors

Japan . 100 parts In-Stock

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Bristol Electronics

USA . 5,914 parts In-Stock

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$0.090

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$0.013

5,914

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$0.045

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$0.013

TME

Poland . 2,761 parts In-Stock

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$0.150

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2,761

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Maritex

Poland . 11,380 parts In-Stock

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NAC Semi

USA . 3,060,000 parts In-Stock

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IBS Electronics

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ComSIT Distribution GmbH

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Vyrian

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Sensible Micro Corp

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Chip Stock

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J2 Sourcing AB

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Martec Srl

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Lantek

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NPI Materials, Inc.

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Inventory MP

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Ampacity Inc.

Singapore . 304,674 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Corphita

USA . 641 parts In-Stock

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Continental Prestige Electronics

USA . 3,489 parts In-Stock

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Argo Parts USA

USA . 1,059 parts In-Stock

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Modulus Dynamics

Lithuania . 7,442 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Aztec Data Supply Inc.

USA . 327 parts In-Stock

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Perfect Parts

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GreenTree Electronics

Israel . 90,000 parts In-Stock

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Kepictronics

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ChipstoGo Electronic ltd

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Robosynatics

Brazil . 32,499 parts In-Stock

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Lucentia Tech

USA . 32,499 parts In-Stock

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Eastek

USA . 27,000 parts In-Stock

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Futuretech Components

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 5,919 parts In-Stock

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TANS Electronics

Latvia . 4,957 parts In-Stock

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Problanco Electronics

Mexico . 4,833 parts In-Stock

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Ashlea Components Ltd (Excess)

UK . 4,359 parts In-Stock

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Component Connect

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SupplyDigital Components

Austria . 3,892 parts In-Stock

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iodParts Technologies Inc.

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Cyclops Electronics Ltd (Excess)

UK . 2,678 parts In-Stock

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UHIMA Technologies

Türkiye . 275 parts In-Stock

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Overview

Discover the MMBZ27VCLT1G by Onsemi, a top-tier manufacturer specializing in Transient Suppression Devices. This small outline diode boasts a maximum clamping voltage of 38V, offering unparalleled protection against voltage spikes and surges. With its common cathode configuration and dual terminal design, this Zener diode is ideal for a wide range of applications. Trust Onsemi's expertise and quality craftsmanship to safeguard your electronics and ensure reliable performance. Choose the MMBZ27VCLT1G for superior protection and peace of mind.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the device in various environments.

Config:

COMMON CATHODE, 2 ELEMENTS - Allows for effective transient suppression with two elements working together.

Surface Mount:

YES - Enables easy installation on circuit boards for seamless integration.

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W - Ensures reliable performance under high transient conditions.

Nominal Breakdown Voltage:

27 V - Offers precise control over voltage levels for protection against surges.

Package Shape:

RECTANGULAR - Facilitates efficient packaging and mounting in electronic systems.

No. of Terminals:

3 - Allows for versatile connectivity options in circuits.

Package Style (Meter):

SMALL OUTLINE - Saves space and provides a compact design for crowded PCBs.

Maximum Operating Temperature:

150 °C - Ensures stability and functionality in high-temperature environments.

Minimum Operating Temperature:

55 °C - Supports operation in extremely low temperature conditions.

Terminal Finish:

MATTE TIN - Enhances solderability and conductivity for reliable connections.

Terminal Position:

DUAL - Facilitates easy installation and connectivity in circuit layouts.

Maximum Power Dissipation:

0.225 W - Provides efficient energy handling capabilities for transient suppression.

Minimum Breakdown Voltage:

25.65 V - Offers precise protection against voltage spikes for connected components.

Maximum Time At Peak Reflow Temperature (s):

30 - Enables safe reflow processes during manufacturing or rework.

Peak Reflow Temperature °C:

260 - Withstands high-temperature soldering processes for secure attachment.

Maximum Breakdown Voltage:

28.35 V - Ensures reliable protection against overvoltage events for the system.

Reference Standard:

UL RECOGNIZED - Meets industry standards for quality and safety assurance.

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE - Specifically designed for transient suppression applications.

Technology:

ZENER - Utilizes Zener diode technology for efficient voltage regulation and transient protection.

Terminal Form:

GULL WING - Facilitates easy assembly and secure attachment to circuit boards.

No. of Elements:

2 - Provides redundancy and improved performance in transient suppression.

Maximum Repetitive Peak Reverse Voltage:

22 V - Offers reliable protection against reverse voltage spikes in the circuit.

Polarity:

UNIDIRECTIONAL - Directs transient current flow in a single direction for effective suppression.

Maximum Clamping Voltage:

38 V - Limits voltage spikes to a safe level for protected components.

Diode Element Material:

SILICON - Utilizes high-quality silicon material for durable and reliable transient suppression.

Technical Specifications

Transient Suppression Devices MMBZ27VCLT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

28.35 V

Minimum Breakdown Voltage:

25.65 V

Nominal Breakdown Voltage:

27 V

Maximum Clamping Voltage:

38 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ27VCLT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-650-4772, 5961016504772

NIIN

016504772

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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