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MMBZ20VALT1G

Onsemi

MMBZ20VALT1G by Onsemi

MMBZ20VALT1G by Onsemi is a Zener diode with common anode configuration, 2 elements, and max breakdown voltage of 21V. Ideal for transient suppression applications in electronics due to its low reverse current (0.05uA), high clamping voltage (28V), and compact small outline package style.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 351,464 parts In-Stock

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$0.151

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Mouser Electronics

USA . 62,024 parts In-Stock

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$0.240

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$0.084

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$0.048

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$0.084

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$0.042

DigiKey

USA . 36,038 parts In-Stock

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$0.240

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$0.089

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Future Electronics

Canada . 561,000 parts In-Stock

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Verical

USA . 300,000 parts In-Stock

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Master Electronics

USA . 300,000 parts In-Stock

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EBV Elektronik

Germany . 117,000 parts In-Stock

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Farnell

UK . 9,200 parts In-Stock

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Element14

Singapore . 9,200 parts In-Stock

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Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Chip1Stop

Japan . 1,790 parts In-Stock

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Arrow

USA . 1,740 parts In-Stock

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$0.084

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Distributors (In-Stock)

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Digiode

USA . 1,204 parts In-Stock

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TME

Poland . 878 parts In-Stock

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$0.100

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$0.047

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$0.036

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878

$0.100

$0.047

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$0.033

Maritex

Poland . 3,000 parts In-Stock

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$0.144

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Nova Conductors

Japan . 450 parts In-Stock

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$0.250

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Ozdisan Elektronik

Türkiye . 3,400 parts In-Stock

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$61.611

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IBS Electronics

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NAC Semi

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Chip Stock

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Vyrian

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Cyclops Electronics Ltd

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Bristol Electronics

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Holdelec - ElecDif-Pro

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Rebound Electronics

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ComSIT Distribution GmbH

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LIBRA Elektronik GmbH

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Microfarads

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Ampacity Inc.

Singapore . 45,570 parts In-Stock

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Corphita

USA . 946 parts In-Stock

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Corohmni

South Africa . 113 parts In-Stock

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Advanced Electronics

New Zealand . 60 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,301 parts In-Stock

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Argo Parts USA

USA . 4,021 parts In-Stock

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Continental Prestige Electronics

USA . 294 parts In-Stock

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Component Stockers USA

USA . 427 parts In-Stock

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$99.990

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Perfect Parts

USA . 10,186,191 parts In-Stock

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GreenTree Electronics

Israel . 507,000 parts In-Stock

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RC Electronics

USA . 116,175 parts In-Stock

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Kepictronics

USA . 83,100 parts In-Stock

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iodParts Technologies Inc.

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ChipstoGo Electronic ltd

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Eastek

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Kulean Microsystems

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SupplyDigital Components

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Lixinc

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Metaverse IC Inc.

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Component Connect

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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Glotronic Ltd.

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Problanco Electronics

Mexico . 1,964 parts In-Stock

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S.R.D Solutions

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UHIMA Technologies

Türkiye . 883 parts In-Stock

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Authorized Procurement Solutions

USA . 491 parts In-Stock

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Overview

Experience reliable transient suppression with the MMBZ20VALT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality products for various applications. This common anode device offers superior protection against voltage spikes, ensuring the safety of your electronics. With a nominal breakdown voltage of 20V and maximum clamping voltage of 28V, this Zener diode provides peace of mind for your circuits. Trust Onsemi for top-notch performance and value in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures the device is lightweight and durable, making it suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with 2 elements provides effective protection against transient voltage spikes, enhancing the reliability of the connected circuit.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

With a high maximum non-repetitive peak reverse power dissipation of 40W, this device can handle transient voltage spikes effectively without getting damaged.

Nominal Breakdown Voltage: 20 V

The nominal breakdown voltage of 20V ensures that the device activates at the specified voltage level, providing reliable protection to the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this device to be used in a wide range of environments without compromising its performance.

Reference Standard: IEC-61000-4-2

Compliance with the IEC-61000-4-2 standard ensures that this device meets industry requirements for transient suppression, ensuring reliability and safety.

Technical Specifications

Transient Suppression Devices MMBZ20VALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

21 V

Minimum Breakdown Voltage:

19 V

Nominal Breakdown Voltage:

20 V

Maximum Clamping Voltage:

28 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

17 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

17 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ20VALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-660-7000, 5961016607000

NIIN

016607000

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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