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MMBZ15VALT1G

Onsemi

MMBZ15VALT1G by Onsemi

MMBZ15VALT1G by Onsemi is a Zener diode with 15V breakdown voltage, 40W peak power dissipation, and 0.05uA reverse current. Commonly used in transient suppression applications due to its small outline package and unidirectional polarity for protecting sensitive electronics from voltage spikes.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

42

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 996,000 parts In-Stock

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$0.029

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Rochester

USA . 27,000 parts In-Stock

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$0.040

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Mouser Electronics

USA . 48,578 parts In-Stock

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$0.240

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$0.048

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48,578

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$0.084

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$0.042

DigiKey

USA . 35,521 parts In-Stock

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$0.089

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Future Electronics

Canada . 102,000 parts In-Stock

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Verical

USA . 81,000 parts In-Stock

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Master Electronics

USA . 81,000 parts In-Stock

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Farnell

UK . 32,778 parts In-Stock

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Element14

Singapore . 32,758 parts In-Stock

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Chip1Stop

Japan . 4,290 parts In-Stock

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$0.041

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Arrow

USA . 3,000 parts In-Stock

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Digiode

USA . 1,977 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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TME

Poland . 847 parts In-Stock

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$0.041

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Forefront Electronics and Design

USA . 2,753 parts In-Stock

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$0.490

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IBS Electronics

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Vyrian

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Electro Sonic

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Chip Stock

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Cyclops Electronics Ltd

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NAC Semi

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Bristol Electronics

USA . 30,736 parts In-Stock

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Netsource Technology, Inc.

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Inventory MP

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Lantek

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ComSIT Distribution GmbH

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Sogenti Electronics

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ComSIT USA

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North Shore Components

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J2 Sourcing AB

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Prism Electronics

USA . 2,628 parts In-Stock

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Classic Components Corporation

USA . 2,275 parts In-Stock

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Atlantic Semiconductor

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NPI Materials, Inc.

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Semtec, LLC

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Mil-Aero Solutions, Inc.

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EMSNET

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Corphita

USA . 393 parts In-Stock

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Ampacity Inc.

Singapore . 276,034 parts In-Stock

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Semicontronic

India . 230,196 parts In-Stock

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Corohmni

South Africa . 472 parts In-Stock

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Advanced Electronics

New Zealand . 600 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,209 parts In-Stock

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Continental Prestige Electronics

USA . 35,760 parts In-Stock

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GreenTree Electronics

Israel . 312,000 parts In-Stock

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Eastek

USA . 285,000 parts In-Stock

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Perfect Parts

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ChipstoGo Electronic ltd

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Argo Parts USA

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,691 parts In-Stock

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SupplyDigital Components

Austria . 2,620 parts In-Stock

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Kulean Microsystems

USA . 1,033 parts In-Stock

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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Lixinc

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Overview

Discover the ultimate solution for protecting your electronic devices with the MMBZ15VALT1G by Onsemi. As a leading manufacturer in the industry of Transient Suppression Devices, Onsemi ensures top-notch quality and reliability. This common anode, 2-element device offers a nominal breakdown voltage of 15V, providing unmatched protection against voltage spikes. With surface mount capabilities and a compact rectangular package style, this product is perfect for a wide range of applications. Trust Onsemi to deliver the value, benefits, and advantages you need to keep your electronics safe and running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making this product a reliable choice for transient suppression.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for efficient suppression of transient voltage spikes, providing added protection to connected devices.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving on PCBs, making it suitable for compact electronic devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 40 W

High peak reverse power dissipation ensures that the device can handle sudden voltage surges effectively, protecting electronic components from damage.

Nominal Breakdown Voltage: 15 V

The nominal breakdown voltage of 15 V provides efficient suppression of transient voltage spikes above this threshold, safeguarding connected devices.

Maximum Reverse Current: 0.05 uA

Low reverse current ensures minimal power loss and efficient operation of the transient suppression device.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into electronic circuits and efficient use of space on PCBs.

Reverse Test Voltage: 12 V

Reverse test voltage of 12 V ensures reliable performance under reverse voltage conditions, enhancing the overall protection provided by the device.

No. of Terminals: 3

Having 3 terminals allows for proper connection and secure attachment of the transient suppression device on the circuit board, ensuring stable operation.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it suitable for use in compact electronic devices while providing effective transient suppression capabilities.

Technical Specifications

Transient Suppression Devices MMBZ15VALT1G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Maximum Breakdown Voltage:

15.75 V

Minimum Breakdown Voltage:

14.25 V

Nominal Breakdown Voltage:

15 V

Maximum Clamping Voltage:

21 V

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

.9 V

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

40 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

12 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

12 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBZ15VALT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-660-7375, 5961016607375

NIIN

016607375

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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