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MJD112-1G

Onsemi

MJD112-1G by Onsemi

MJD112-1G by Onsemi is a NPN Power BJT with 20W power dissipation, 100V max collector-emitter voltage, and 2A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 200 and fT of 25MHz.

Median Price

$0.570

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 223 parts In-Stock

1+ parts

$1.000

100+ parts

$0.503

1k+ parts

$0.388

10k+ parts

$0.309

223

$1.000

$0.503

$0.388

$0.309

Mouser Electronics

USA . 1,318 parts In-Stock

1+ parts

$1.580

100+ parts

$0.600

1k+ parts

-

10k+ parts

-

1,318

$1.580

$0.600

-

-

DigiKey

USA . 5,845 parts In-Stock

1+ parts

$1.600

100+ parts

$0.710

1k+ parts

$0.529

10k+ parts

$0.404

5,845

$1.600

$0.710

$0.529

$0.404

Adafruit Industries

USA . 2,500 parts In-Stock

1+ parts

$1.729

100+ parts

$1.573

1k+ parts

$1.418

10k+ parts

-

2,500

$1.729

$1.573

$1.418

-

Rochester

USA . 231,028 parts In-Stock

1+ parts

-

100+ parts

$0.525

1k+ parts

$0.436

10k+ parts

$0.388

231,028

-

$0.525

$0.436

$0.388

Verical

USA . 150,169 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.544

10k+ parts

$0.485

150,169

-

-

$0.544

$0.485

Master Electronics

USA . 43,200 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.579

10k+ parts

$0.392

43,200

-

$0.674

$0.579

$0.392

Arrow

USA . 525 parts In-Stock

1+ parts

-

100+ parts

$0.341

1k+ parts

-

10k+ parts

-

525

-

$0.341

-

-

RS (Exports)

UK . 105 parts In-Stock

1+ parts

-

100+ parts

$0.490

1k+ parts

$0.465

10k+ parts

-

105

-

$0.490

$0.465

-

Future Electronics

Canada . 73 parts In-Stock

1+ parts

-

100+ parts

$0.570

1k+ parts

$0.535

10k+ parts

$0.515

73

-

$0.570

$0.535

$0.515

Chip1Stop

Japan . 57 parts In-Stock

1+ parts

-

100+ parts

$0.430

1k+ parts

$0.426

10k+ parts

$0.425

57

-

$0.430

$0.426

$0.425

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,477 parts In-Stock

1+ parts

$0.385

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

$0.385

-

-

-

Nova Conductors

Japan . 85 parts In-Stock

1+ parts

$0.474

100+ parts

-

1k+ parts

-

10k+ parts

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85

$0.474

-

-

-

American Microsemiconductor Inc.

USA . 48 parts In-Stock

1+ parts

$1.250

100+ parts

-

1k+ parts

-

10k+ parts

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48

$1.250

-

-

-

TME

Poland . 129 parts In-Stock

1+ parts

$1.300

100+ parts

$0.680

1k+ parts

-

10k+ parts

-

129

$1.300

$0.680

-

-

IBS Electronics

USA . 43,273 parts In-Stock

1+ parts

-

100+ parts

$0.603

1k+ parts

$0.750

10k+ parts

$0.568

43,273

-

$0.603

$0.750

$0.568

Vyrian

USA . 39,589 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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39,589

-

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 76,702 parts In-Stock

1+ parts

$0.344

100+ parts

$0.335

1k+ parts

$0.334

10k+ parts

-

76,702

$0.344

$0.335

$0.334

-

Ampacity Inc.

Singapore . 38,927 parts In-Stock

1+ parts

$0.344

100+ parts

-

1k+ parts

-

10k+ parts

-

38,927

$0.344

-

-

-

Corphita

USA . 1,549 parts In-Stock

1+ parts

$0.364

100+ parts

-

1k+ parts

-

10k+ parts

-

1,549

$0.364

-

-

-

Corohmni

South Africa . 332 parts In-Stock

1+ parts

$0.405

100+ parts

-

1k+ parts

-

10k+ parts

-

332

$0.405

-

-

-

Argo Parts USA

USA . 3,379 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

$0.397

3,379

$0.410

-

-

$0.397

Continental Prestige Electronics

USA . 3 parts In-Stock

1+ parts

$0.449

100+ parts

-

1k+ parts

-

10k+ parts

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3

$0.449

-

-

-

Aztec Data Supply Inc.

USA . 1,748 parts In-Stock

1+ parts

$0.794

100+ parts

-

1k+ parts

-

10k+ parts

-

1,748

$0.794

-

-

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.729

100+ parts

$1.573

1k+ parts

$1.418

10k+ parts

-

2,500

$1.729

$1.573

$1.418

-

Infinite Electronics LLP (Excess)

. 120,000 parts In-Stock

1+ parts

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100+ parts

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120,000

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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TANS Electronics

Latvia . 7,995 parts In-Stock

1+ parts

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7,995

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Kulean Microsystems

USA . 5,430 parts In-Stock

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5,430

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A-Z Elektronik GmbH

Germany . 5,039 parts In-Stock

1+ parts

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5,039

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-

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Perfect Parts

USA . 4,621 parts In-Stock

1+ parts

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4,621

-

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Problanco Electronics

Mexico . 4,130 parts In-Stock

1+ parts

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4,130

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

-

-

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SupplyDigital Components

Austria . 1,512 parts In-Stock

1+ parts

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1,512

-

-

-

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.465

1k+ parts

$0.451

10k+ parts

$0.441

500

-

$0.465

$0.451

$0.441

iodParts Technologies Inc.

India . 375 parts In-Stock

1+ parts

-

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375

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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95

-

-

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Authorized Procurement Solutions

USA . 65 parts In-Stock

1+ parts

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100+ parts

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65

-

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Overview

Unlock the power of innovation with the MJD112-1G by Onsemi, a high-quality Power Bipolar Junction Transistor ideal for switching applications. Manufactured by Onsemi, known for their commitment to excellence and reliability, this NPN Darlington transistor offers customers unmatched performance and value. With a built-in diode and resistor, this transistor maximizes efficiency and reliability in a variety of electronic circuits. Trust Onsemi's expertise and experience to take your projects to the next level with the MJD112-1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity.

Polarity or Channel Type: NPN

Suitable for use in a wide range of electronic applications due to its NPN configuration.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated diode and resistor simplify circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and efficient operation.

Package Shape: RECTANGULAR

Rectangular shape makes it easier to mount and handle during assembly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and ease of soldering.

Maximum Power Dissipation (Abs): 20 W

Can handle high power dissipation, making it suitable for demanding applications.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable amplification and switching performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 100 V

Handles high collector-emitter voltages, expanding its range of potential applications.

Transistor Element Material: SILICON

Silicon material offers good thermal performance and high reliability.

Maximum Collector Current (IC): 2 A

Capable of handling high collector currents, suitable for a variety of applications.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and long-term reliability of the terminals.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper orientation.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and routing of connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a sufficient duration during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures without damage.

Nominal Transition Frequency (fT): 25 MHz

High transition frequency allows for fast switching and amplification in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD112-1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD112-1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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