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MCR22-8G

Onsemi

MCR22-8G by Onsemi

MCR22-8G by Onsemi is a single SCR with a max on-state current of 1.5A and repetitive peak reverse voltage of 600V. It is used in applications requiring high reliability and performance, such as power supplies and motor control systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,671 parts In-Stock

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Digiode

USA . 542 parts In-Stock

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Advanced Electronics

New Zealand . 4,932 parts In-Stock

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$3.423

100+ parts

$3.115

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$2.807

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4,932

$3.423

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$2.807

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AZTECH Wire

Italy . 254 parts In-Stock

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$9.190

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Component Stockers USA

USA . 700 parts In-Stock

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$99.990

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Perfect Parts

USA . 10,507 parts In-Stock

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TANS Electronics

Latvia . 6,040 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,943 parts In-Stock

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Problanco Electronics

Mexico . 3,857 parts In-Stock

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SupplyDigital Components

Austria . 2,983 parts In-Stock

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Corphita

USA . 2,085 parts In-Stock

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Kulean Microsystems

USA . 807 parts In-Stock

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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Kepictronics

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Corohmni

South Africa . 130 parts In-Stock

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Overview

Discover the power and reliability of the MCR22-8G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Silicon Controlled Rectifiers that are ideal for a wide range of applications. With its high performance and durability, this SCR ensures seamless operation and superior efficiency. Trust in Onsemi to provide you with a product that not only meets your needs but exceeds your expectations. Upgrade your systems today with the MCR22-8G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the SCR lightweight and durable, making it suitable for various applications.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current ensures efficient and precise control over the SCR, contributing to its reliable performance.

Configuration: SINGLE

The single configuration simplifies the design and installation process, making it user-friendly for both professionals and hobbyists.

Maximum On-state Current: 1.5 A

The high on-state current rating allows the SCR to handle heavy loads and deliver consistent performance under demanding conditions.

Repetitive Peak Reverse Voltage: 600 V

The high repetitive peak reverse voltage rating ensures the SCR can withstand voltage spikes and ensures long-term reliability.

Technical Specifications

Silicon Controlled Rectifiers (SCR) MCR22-8G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Nominal Circuit Commutated Turn-off Time:

40 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

25 V/us

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Maximum Leakage Current:

.2 mA

Non Repetitive Peak On-state Current:

15 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

1.5 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

1.5 A

Repetitive Peak Off-state Voltage:

600 V

Repetitive Peak Reverse Voltage:

600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

MCR22-8G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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