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MC10H603FNG

Onsemi

MC10H603FNG by Onsemi

MC10H603FNG by Onsemi is a voltage level translator with 9 functions, operating b/w -5.2V to 5V. It features ECL technology, 12ns max delay, and ECL to TTL translation. Ideal for applications requiring precise signal conversion in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,222 parts In-Stock

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Vyrian

USA . 59 parts In-Stock

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59

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 4,843 parts In-Stock

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4,843

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Problanco Electronics

Mexico . 2,934 parts In-Stock

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SupplyDigital Components

Austria . 2,498 parts In-Stock

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TANS Electronics

Latvia . 2,012 parts In-Stock

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Corphita

USA . 741 parts In-Stock

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Microchip USA

USA . 300 parts In-Stock

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Unlock new possibilities with the MC10H603FNG voltage level translator by Onsemi. Designed with precision and quality in mind, this chip carrier package offers 9 functions with a 3-STATE output characteristic, making it ideal for a wide range of applications. From ECL to TTL translation, this product boasts a nominal supply voltage of 5V and a maximum delay of just 12ns. Trust in Onsemi's reputation for excellence and innovation, and experience the seamless integration and enhanced performance that the MC10H603FNG brings to your projects. Elevate your designs with unparalleled efficiency and reliability today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, making installation and assembly hassle-free.

Maximum Supply Voltage: 5.5 V

Can handle high supply voltages, providing a wider range of compatibility with various systems.

No. of Functions: 9

Multiple functions in a single device offer versatility and flexibility in application usage.

Package Shape: SQUARE

Square shape allows for compact and efficient placement on circuit boards, saving space.

Power Supplies (V): 5,-5.2

Provides both positive and negative power supplies, catering to different system requirements.

No. of Terminals: 28

Ample terminals allow for easy connectivity and integration into various circuit configurations.

Package Style (Meter): CHIP CARRIER

Chip carrier style enhances thermal performance and overall reliability of the product.

Minimum Supply Voltage: 4.5 V

Can operate effectively even at low supply voltages, ensuring consistent performance.

Maximum Operating Temperature: 85 °C

Capable of functioning under high temperatures, making it suitable for a wide range of environments.

Output Characteristics: 3-STATE

3-state output allows for tristate control, enabling efficient signal transmission and management.

Minimum Operating Temperature: 0 °C

Can operate in low-temperature conditions, ensuring reliable performance in various environments.

Terminal Finish: TIN

Tin finish on terminals provides corrosion resistance and ensures long-term stability.

Terminal Position: QUAD

Quad terminal position facilitates easy connection and integration with other components.

Maximum Seated Height: 4.57 mm

Low seated height enables compact design and efficient space utilization in electronic systems.

Width: 11.505 mm

Optimal width allows for easy placement and fitting within circuit board layouts.

Output Polarity: COMPLEMENTARY

Complementary output polarity ensures accurate signal translation and communication between different voltage levels.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable soldering and ensures robust mechanical connections.

Length: 11.505 mm

Optimal length for easy integration and placement in various electronic systems and designs.

Technology: ECL

Utilization of ECL technology ensures high-speed performance and low power consumption, making it an efficient choice for voltage level translation.

Terminal Form: J BEND

J bend terminal form provides secure and reliable connections, preventing disconnection or signal loss.

Output Latch/Register: LATCH

Latch output ensures stable and reliable signal retention, enhancing signal integrity and overall performance of the product.

Nominal Supply Voltage: 5 V

Nominal supply voltage of 5V ensures compatibility with standard voltage requirements in most electronic systems and devices.

Nominal Negative Supply Voltage: -5.2 V

Nominal negative supply voltage of -5.2V facilitates dual power supply operation, enhancing compatibility with various systems and applications.

Maximum Delay: 12 ns

Low maximum delay ensures fast signal processing and response times, making it suitable for high-speed applications.

Terminal Pitch: 1.27 mm

Optimal terminal pitch allows for easy connection and soldering, ensuring reliable electrical contacts.

Interface IC Type: ECL TO TTL TRANSLATOR

ECL to TTL translator interface IC type enables seamless communication and compatibility between ECL and TTL logic levels.

Technical Specifications

Voltage Level Translators MC10H603FNG attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

12 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

9

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

3-STATE

Output Latch/Register:

LATCH

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC10H603FNG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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