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MC10H351FN

Onsemi

MC10H351FN by Onsemi

MC10H351FN by Onsemi is a voltage level translator with 4 functions, operating at 0-75 °C. It has a supply voltage range of 4.75-5.25 V and offers fast operation with a max delay of 2.2 ns. Ideal for TTL/NMOS to ECL translation in commercial applications requiring precise signal conversion.

Median Price

$5.410

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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DigiKey

USA . 5,811 parts In-Stock

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$5.410

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Rochester

USA . 5,510 parts In-Stock

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$4.660

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$4.170

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$3.930

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$3.930

Verical

USA . 3,857 parts In-Stock

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$5.825

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$5.213

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Vyrian

USA . 1,996 parts In-Stock

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$4.560

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Digiode

USA . 1,999 parts In-Stock

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American Microsemiconductor Inc.

USA . 200 parts In-Stock

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$12.710

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DF Sales Co.

USA . 1,330 parts In-Stock

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$14.500

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DF Sales Co.

USA . 1,330 parts In-Stock

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Forefront Electronics and Design

USA . 7 parts In-Stock

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Elcom Components

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Cyclops Electronics Ltd

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Classic Components Corporation

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Sogenti Electronics

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J2 Sourcing AB

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Bristol Electronics

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Atlantic Semiconductor

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A2Z Electronics, Inc.

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Odintec Ltd.

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NAC Semi

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Inland Empire Components Inc.

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Resion

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Mentor Electronics Marketing, LLC

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Semi Source

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M&R Communications

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Corohmni

South Africa . 262 parts In-Stock

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Corphita

USA . 1,711 parts In-Stock

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Kepictronics

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SupplyDigital Components

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Kulean Microsystems

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Continental Prestige Electronics

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Problanco Electronics

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UHIMA Technologies

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Microchip USA

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Overview

Elevate your voltage level translation with the MC10H351FN by Onsemi. Crafted with precision and expertise, this voltage level translator offers unparalleled quality and reliability that Onsemi is renowned for. Perfect for a wide range of applications, this product provides seamless voltage conversion with maximum efficiency. Experience the value of smooth signal transition and improved performance with the MC10H351FN, designed to exceed your expectations. Elevate your projects with Onsemi's innovative technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the voltage level translator, ensuring long-term reliability.

Maximum Supply Voltage: 5.25 V

The high maximum supply voltage allows for compatibility with a wide range of electronic devices and systems.

No. of Functions: 4

With multiple functions, this voltage level translator can perform various tasks simultaneously, increasing its versatility and efficiency.

Maximum Operating Temperature: 75 °C

The high operating temperature range makes this product suitable for use in a variety of environments and conditions.

Output Characteristics: OPEN-EMITTER

The open-emitter output characteristics allow for flexibility in connecting to different types of circuits and devices.

Nominal Supply Voltage: 5 V

The use of a common nominal supply voltage simplifies integration with existing systems and reduces compatibility issues.

Technology: ECL

The Emitter-Coupled Logic (ECL) technology offers high speed and low power consumption, making this voltage level translator suitable for high-performance applications.

Technical Specifications

Voltage Level Translators MC10H351FN attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2.2 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e0

Length:

8.965 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC(UNSPEC)

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.25 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

8.965 mm

Trade Compliance

MC10H351FN Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-492-9278, 5962014929278

NIIN

014929278

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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