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MC100ELT24DR2

Onsemi

MC100ELT24DR2 by Onsemi

MC100ELT24DR2 by Onsemi is a voltage level translator with 8 terminals and ECL technology. It operates b/w -40 to 85 °C, translating TTL to ECL signals with a max delay of 2 ns. Ideal for industrial applications requiring precise signal translation in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Chip Stock

USA . 16,000 parts In-Stock

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Bristol Electronics

USA . 3,815 parts In-Stock

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Inventory MP

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Cyclops Electronics Ltd

UK . 2,500 parts In-Stock

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Microfarads

USA . 2,363 parts In-Stock

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Digiode

USA . 2,033 parts In-Stock

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R&J Components

USA . 1,425 parts In-Stock

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Vyrian

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Atlantic Semiconductor

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Electronics Depot

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Authorized Procurement Solutions

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Kepictronics

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Problanco Electronics

Mexico . 5,791 parts In-Stock

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TANS Electronics

Latvia . 3,448 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

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Overview

Elevate your voltage level translation needs with the MC100ELT24DR2 by Onsemi. Crafted with precision and quality, this small outline package offers a seamless transition from TTL to ECL translator interfaces. Whether it's industrial applications or high-speed data transmission, this device delivers with its complementary output polarity and ultra-fast 2 ns maximum delay. Trust in Onsemi's expertise and elevate your projects to new heights with the MC100ELT24DR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Allows for easy installation on printed circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Can handle high supply voltages, providing a wide operating range.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing designs and layouts.

Power Supplies (V): 5,-4.5/-5.2

Supports a dual power supply configuration, providing flexibility in power options.

No. of Terminals: 8

Sufficient terminals for connecting to various components and systems.

Package Style (Meter): SMALL OUTLINE

Compact size for efficient use of board space.

Minimum Supply Voltage: 4.5 V

Can operate even at lower supply voltages, ensuring compatibility with different systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Output Characteristics: OPEN-EMITTER

Provides flexibility in output configurations.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions.

Terminal Finish: TIN LEAD

Durable finish that ensures reliable connections.

Terminal Position: DUAL

Supports dual terminal positioning for enhanced connectivity.

Maximum Seated Height: 1.75 mm

Low profile design for space-constrained applications.

Width: 3.9 mm

Compact width for efficient board layout.

Output Polarity: COMPLEMENTARY

Offers complementary output signals, suitable for various applications.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during assembly processes.

Length: 4.9 mm

Compact length for space-saving designs.

Temperature Grade: INDUSTRIAL

Designed to meet industrial temperature requirements.

Technology: ECL

ECL technology ensures high-speed performance and low power consumption.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering.

Nominal Supply Voltage: 5 V

Standard supply voltage for compatibility with various systems.

Nominal Negative Supply Voltage: -5 V

Supports negative supply voltage for balanced operation.

Maximum Delay: 2 ns

Low delay time for fast signal translation.

Terminal Pitch: 1.27 mm

Standard terminal pitch for easy integration.

Interface IC Type: TTL TO ECL TRANSLATOR

Specifically designed for translating signals between TTL and ECL logic levels.

Technical Specifications

Voltage Level Translators MC100ELT24DR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Nominal Negative Supply Voltage:

-5 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

5,-4.5/-5.2

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

MC100ELT24DR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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