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MBRM130LT1

Onsemi

MBRM130LT1 by Onsemi

MBRM130LT1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.2V and output current of 1A. It operates at a max temperature of 125°C, making it suitable for applications requiring high efficiency and fast switching, such as power supplies and voltage regulation circuits.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,525 parts In-Stock

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$0.120

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$0.120

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$0.120

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13,525

$0.120

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$0.120

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Distributors (In-Stock)

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Freelance Electronics

USA . 2,842 parts In-Stock

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$0.114

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$0.119

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$0.112

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2,842

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TEDSS.com

USA . 2,498 parts In-Stock

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$0.120

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$0.078

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2,498

$0.120

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$0.078

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Nova Conductors

Japan . 10 parts In-Stock

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$0.126

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Chip Stock

USA . 455,700 parts In-Stock

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Vyrian

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Zilex Electronics Inc.

Canada . 5,100 parts In-Stock

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Electronic Expediters

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Connector Distribution Corp

USA . 2,700 parts In-Stock

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Right Parts Inc.

USA . 2,700 parts In-Stock

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Digiode

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Semi Source

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PC Components Company LLC

USA . 1,700 parts In-Stock

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North Shore Components

USA . 1,670 parts In-Stock

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Bristol Electronics

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M&R Communications

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ACDS - Activité Composants Distribution Service

France . 858 parts In-Stock

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858

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Microfarads

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Electronics Depot

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NexGen Digital

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Distributors (Availability)

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Semicontronic

India . 13,258 parts In-Stock

1+ parts

$0.102

100+ parts

$0.099

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$0.099

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13,258

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$0.099

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Corohmni

South Africa . 293 parts In-Stock

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$0.114

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Continental Prestige Electronics

USA . 5,112 parts In-Stock

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$0.126

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$0.123

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Argo Parts USA

USA . 53 parts In-Stock

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$0.126

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53

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Advanced Electronics

New Zealand . 17 parts In-Stock

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$0.157

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$0.143

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$0.129

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17

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Ampacity Inc.

Singapore . 13,088 parts In-Stock

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$0.222

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AZTECH Wire

Italy . 346 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Kepictronics

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Metaverse IC Inc.

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 969 parts In-Stock

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UHIMA Technologies

Türkiye . 912 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Corphita

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Netroflash

USA . 100 parts In-Stock

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Overview

Unleash the power of innovation with the MBRM130LT1 by Onsemi! As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. This Schottky rectifier diode is designed for high performance and efficiency, making it ideal for a wide range of applications. From power supplies to battery chargers, this diode offers maximum output current of 1A and a low forward voltage of 0.2V, ensuring optimal functionality. Experience the value and benefits of the MBRM130LT1 and elevate your projects to new heights with this cutting-edge component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for a range of environments.

Maximum Operating Temperature: 125 °C

Can operate efficiently in high temperature conditions, ensuring reliability.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during soldering processes, ensuring proper installation.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification tasks, ensuring optimal performance in those applications.

Maximum Output Current: 1 A

Capable of handling a maximum output current of 1A, suitable for various low to medium power applications.

Technology: SCHOTTKY

Utilizes Schottky technology which provides fast switching speeds and low forward voltage drop, enhancing efficiency.

Maximum Repetitive Peak Reverse Voltage: 30 V

Can handle up to 30V of reverse voltage, making it suitable for applications where reverse voltage protection is required.

Technical Specifications

Diodes & Rectifiers MBRM130LT1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.2 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PDSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM130LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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