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MBRM110ET1G

Onsemi

MBRM110ET1G by Onsemi

MBRM110ET1G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.36V and output current of 1A. It operates b/w -55°C to 150°C, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package style and gull wing terminal form enable easy surface mount installation in various electronic circuits.

Median Price

$0.385

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Rochester

USA . 15,673 parts In-Stock

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$0.170

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$0.170

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Flip Electronics (Authorized)

USA . 27,000 parts In-Stock

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DigiKey

USA . 24,000 parts In-Stock

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$0.600

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$0.600

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Digiode

USA . 1,271 parts In-Stock

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Nova Conductors

Japan . 42 parts In-Stock

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Flip Electronics

USA . 24,000 parts In-Stock

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Chip Stock

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Sensible Micro Corp

USA . 11,615 parts In-Stock

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Cyclops Electronics Ltd

UK . 6,322 parts In-Stock

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Vyrian

USA . 3,553 parts In-Stock

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Micros

Poland . 2,980 parts In-Stock

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$0.099

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Partservice

France . 2,980 parts In-Stock

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$0.098

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$0.091

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Micros sp.j. W. Kędra i J. Lic

Poland . 2,980 parts In-Stock

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$0.105

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$0.098

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Inventory MP

USA . 1,867 parts In-Stock

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Bristol Electronics

USA . 1,867 parts In-Stock

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Martec Srl

Italy . 491 parts In-Stock

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ComSIT Distribution GmbH

Germany . 359 parts In-Stock

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Goldney Electronics S.L.

Spain . 280 parts In-Stock

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Semi Source

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Distributors (Availability)

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Corohmni

South Africa . 213 parts In-Stock

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$0.096

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213

$0.096

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Aztec Data Supply Inc.

USA . 77 parts In-Stock

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$0.110

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Semicontronic

India . 13,840 parts In-Stock

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$0.145

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$0.141

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$0.141

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Ampacity Inc.

Singapore . 13,762 parts In-Stock

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$0.145

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Corphita

USA . 85 parts In-Stock

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$0.151

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Argo Parts USA

USA . 873 parts In-Stock

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$0.197

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$0.191

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Continental Prestige Electronics

USA . 224 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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AZTECH Wire

Italy . 725 parts In-Stock

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Perfect Parts

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RC Electronics

USA . 73,683 parts In-Stock

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Kepictronics

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Lixinc

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Kulean Microsystems

USA . 7,290 parts In-Stock

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Problanco Electronics

Mexico . 7,012 parts In-Stock

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SupplyDigital Components

Austria . 6,883 parts In-Stock

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TANS Electronics

Latvia . 1,683 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 1,012 parts In-Stock

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UHIMA Technologies

Türkiye . 238 parts In-Stock

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Overview

Enhance your electronic designs with the MBRM110ET1G diode by Onsemi. Crafted with precision and expertise, Onsemi is a trusted manufacturer known for delivering top-quality components. This small outline rectifier diode offers high performance and reliability, making it ideal for a wide range of applications. From power supplies to battery chargers, this Schottky technology diode provides efficient power conversion with a low forward voltage drop of just 0.36V and a maximum output current of 1A. Trust Onsemi to deliver superior quality and performance in every component they produce.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the diode, making it suitable for various applications.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the diode to function effectively in demanding environmental conditions.

Maximum Output Current: 1 A

The high output current rating makes this diode suitable for use in circuits that require higher current levels.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and high switching speed, making it efficient for power conversion applications.

Technical Specifications

Diodes & Rectifiers MBRM110ET1G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM110ET1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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