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MBRM2H100T3G

Onsemi

MBRM2H100T3G by Onsemi

MBRM2H100T3G by Onsemi is a Schottky rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 100V. It operates b/w -65 to 175°C, making it suitable for efficiency applications. This single-configured diode is surface mountable with a small outline package style.

Median Price

$1.430

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,002 parts In-Stock

1+ parts

$1.430

100+ parts

$0.596

1k+ parts

$0.465

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-

9,002

$1.430

$0.596

$0.465

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DigiKey

USA . 8,151 parts In-Stock

1+ parts

$1.430

100+ parts

$0.595

1k+ parts

$0.422

10k+ parts

$0.363

8,151

$1.430

$0.595

$0.422

$0.363

Chip1Stop

Japan . 23 parts In-Stock

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$2.920

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23

$2.920

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.403

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870

$0.403

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Digiode

USA . 337 parts In-Stock

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$0.846

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337

$0.846

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Cyclops Electronics Ltd

UK . 47,870 parts In-Stock

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47,870

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Chip Stock

USA . 47,600 parts In-Stock

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NAC Semi

USA . 24,000 parts In-Stock

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IBS Electronics

USA . 12,000 parts In-Stock

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VRG Components

USA . 11,425 parts In-Stock

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Inland Empire Components Inc.

USA . 11,000 parts In-Stock

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Vyrian

USA . 9,930 parts In-Stock

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Sensible Micro Corp

USA . 8,063 parts In-Stock

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8,063

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A2Z Electronics, Inc.

USA . 4,550 parts In-Stock

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Bristol Electronics

USA . 3,650 parts In-Stock

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3,650

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 957 parts In-Stock

1+ parts

$0.140

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957

$0.140

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Advanced Electronics

New Zealand . 15 parts In-Stock

1+ parts

$0.196

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$0.178

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$0.161

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15

$0.196

$0.178

$0.161

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Corohmni

South Africa . 106 parts In-Stock

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$0.387

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106

$0.387

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Aranea Global

USA . 100 parts In-Stock

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$0.395

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$0.379

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100

$0.395

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$0.379

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Argo Parts USA

USA . 4,911 parts In-Stock

1+ parts

$0.403

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$0.391

4,911

$0.403

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$0.391

Continental Prestige Electronics

USA . 4,629 parts In-Stock

1+ parts

$0.403

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$0.395

4,629

$0.403

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$0.395

Ampacity Inc.

Singapore . 10,053 parts In-Stock

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$0.760

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10,053

$0.760

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Semicontronic

India . 9,798 parts In-Stock

1+ parts

$0.760

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$0.741

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$0.737

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9,798

$0.760

$0.741

$0.737

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Corphita

USA . 1,494 parts In-Stock

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$0.801

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RC Electronics

USA . 59,274 parts In-Stock

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iodParts Technologies Inc.

India . 42,693 parts In-Stock

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Lixinc

USA . 10,287 parts In-Stock

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TANS Electronics

Latvia . 7,884 parts In-Stock

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Problanco Electronics

Mexico . 7,216 parts In-Stock

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Kulean Microsystems

USA . 3,684 parts In-Stock

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Kepictronics

USA . 2,216 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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SupplyDigital Components

Austria . 24 parts In-Stock

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Overview

Discover the power of efficiency with the MBRM2H100T3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers high-quality diodes and rectifiers that are designed for maximum performance. Ideal for a wide range of applications, this product offers a reliable solution for your electronic needs. With a maximum output current of 2A and a maximum reverse voltage of 100V, this Schottky technology diode provides unparalleled value and benefits to customers. Upgrade your devices today with the MBRM2H100T3G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode durable and resistant to environmental factors, ensuring a long lifespan.

Config: SINGLE

The single configuration simplifies the installation and usage of the diode, making it suitable for various applications.

Surface Mount: YES

Being surface mountable makes the diode easy to integrate onto PCBs, saving space and enhancing efficiency.

Maximum Reverse Current: 20 uA

The low reverse current ensures minimal power loss and efficient operation of the diode.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient packaging and placement within electronic devices.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and facilitates compact designs.

Application: EFFICIENCY

Designed for efficiency, this diode is ideal for applications where power optimization is crucial.

Maximum Operating Temperature: 175 °C

The diode can operate efficiently at high temperatures without compromising performance.

Minimum Operating Temperature: -65 °C

The diode can also operate in extreme cold conditions, offering versatility in various environments.

Terminal Finish: MATTE TIN

The matte tin finish provides reliable electrical connections and resistance to oxidation.

Terminal Position: SINGLE

The single terminal position simplifies installation and ensures consistent connectivity.

Case Connection: CATHODE

The cathode case connection enhances safety and ensures proper orientation during installation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is essential for converting AC to DC power with minimal voltage drop.

Maximum Forward Voltage (VF): 0.84 V

The low forward voltage drop helps minimize power loss and improve the efficiency of the diode.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode can handle a wide range of electrical loads.

Technology: SCHOTTKY

Using Schottky technology allows for faster switching and lower forward voltage drop, enhancing overall performance.

Terminal Form: GULL WING

The gull wing terminal form offers easy PCB mounting and reliable solder connections.

Maximum Repetitive Peak Reverse Voltage: 100 V

The high maximum repetitive peak reverse voltage makes this diode suitable for a variety of voltage requirements.

Maximum Non Repetitive Peak Forward Current: 50 A

Capable of handling high peak forward currents, this diode is suitable for momentary overload conditions.

Diode Element Material: SILICON

Made of silicon, this diode offers stable and reliable performance in various applications.

Technical Specifications

Diodes & Rectifiers MBRM2H100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.84 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

20 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM2H100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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