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MBRM140T1

Onsemi

MBRM140T1 by Onsemi

MBRM140T1 by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.3V and output current of 1A. It has a max repetitive peak reverse voltage of 40V, making it suitable for applications requiring high efficiency and low power loss in small outline packages. The diode's gull wing terminal form and cathode case connection enhance its performance in surface mount configurations at temperatures up to 125°C.

Median Price

$0.840

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Global Solutions Electronics Company

USA . 455 parts In-Stock

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$0.140

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Component Electronics Inc.

Canada . 2,983 parts In-Stock

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Vyrian

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Mil-Aero Solutions, Inc.

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North Shore Components

USA . 2,934 parts In-Stock

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QIE Inc.

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Semtec, LLC

USA . 2,584 parts In-Stock

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Digiode

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Resion

USA . 2,004 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,310 parts In-Stock

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Bristol Electronics

USA . 1,310 parts In-Stock

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Dan-Mar Components

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ComSIT Distribution GmbH

Germany . 365 parts In-Stock

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Extreme Components

USA . 242 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Semicontronic

India . 1,581 parts In-Stock

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$0.010

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$0.010

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$0.110

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$0.105

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Corohmni

South Africa . 488 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,947 parts In-Stock

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$0.180

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

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AZTECH Wire

Italy . 882 parts In-Stock

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Lixinc

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Kulean Microsystems

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SupplyDigital Components

Austria . 5,295 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

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Continental Prestige Electronics

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Pacific Micro-Tech

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Argo Parts USA

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Corphita

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ChipTracer

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Cyclops Electronics Ltd (Excess)

UK . 1,875 parts In-Stock

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UHIMA Technologies

Türkiye . 567 parts In-Stock

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TANS Electronics

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Discover the power of reliable performance with the MBRM140T1 diode by Onsemi. Crafted with precision and expertise, this small outline rectifier diode offers exceptional quality and durability. Ideal for a wide range of applications, from power supplies to battery chargers, this Schottky technology marvel ensures efficient energy conversion with a low forward voltage of just 0.3V. Trust in Onsemi's reputation for excellence and choose the MBRM140T1 for your next project to experience unparalleled value and benefits that will elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, making it suitable for a wide range of applications.

Config: SINGLE

The single configuration simplifies the circuit design and makes the diode easy to integrate into various electronic setups.

Surface Mount: YES

Being surface mountable, this diode can be easily mounted onto PCBs, saving space and enabling automated assembly processes.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand challenging thermal conditions, ensuring reliability in different environments.

Case Connection: CATHODE

The cathode case connection simplifies the circuit layout and helps in proper orientation during installation, enhancing user convenience.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting AC to DC, ensuring efficient power conversion in diverse applications.

Maximum Forward Voltage (VF): 0.3 V

The low forward voltage drop of 0.3V minimizes power loss and improves energy efficiency in the circuit.

Maximum Output Current: 1 A

Capable of handling a maximum output current of 1A, this diode is suitable for medium-power applications, providing reliable performance.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage, making this diode efficient for high-frequency applications and power supplies.

Technical Specifications

Diodes & Rectifiers MBRM140T1 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.3 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PDSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM140T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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