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MBRM110LT3

Onsemi

MBRM110LT3 by Onsemi

MBRM110LT3 by Onsemi is a Schottky rectifier diode with a max output current of 1A and max forward voltage of 0.175V. It is designed for applications requiring a small outline, surface-mount package, such as power supplies and voltage regulators. Operating at temperatures up to 125°C, it offers reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 64,000 parts In-Stock

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Vyrian

USA . 2,337 parts In-Stock

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Digiode

USA . 1,291 parts In-Stock

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Nova Conductors

Japan . 67 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,803 parts In-Stock

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$0.100

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$0.100

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Ampacity Inc.

Singapore . 1,546 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 849 parts In-Stock

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$7.866

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849

$7.866

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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TANS Electronics

Latvia . 6,578 parts In-Stock

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Problanco Electronics

Mexico . 6,564 parts In-Stock

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SupplyDigital Components

Austria . 5,132 parts In-Stock

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Kulean Microsystems

USA . 3,720 parts In-Stock

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Continental Prestige Electronics

USA . 3,379 parts In-Stock

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Argo Parts USA

USA . 3,167 parts In-Stock

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Corphita

USA . 1,879 parts In-Stock

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UHIMA Technologies

Türkiye . 683 parts In-Stock

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Corohmni

South Africa . 307 parts In-Stock

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Aranea Global

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Overview

Unlock the power of innovation with the MBRM110LT3 by Onsemi. As a leader in diodes & rectifiers, Onsemi is known for its superior quality and reliability. The MBRM110LT3 offers customers exceptional value with its high efficiency and maximum output current of 1A. Whether you are looking to enhance your electronics design or improve energy efficiency, this Schottky diode is the perfect solution. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and moisture resistance, making the diode suitable for a wide range of operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and installation, reducing complexity and potential points of failure.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: SQUARE

Square package shape provides a compact form factor, saving space on the PCB and enabling dense circuit layouts.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in various environmental conditions, enhancing the diode's overall durability.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and electrical conductivity, facilitating secure connections in the circuit.

Diode Type: RECTIFIER DIODE

Rectifier diode type enables efficient conversion of AC to DC current, making the diode suitable for power supply and rectification applications.

Maximum Forward Voltage (VF): 0.175 V

Low maximum forward voltage results in minimal power loss and efficient operation, making the diode energy-efficient.

Maximum Output Current: 1 A

High maximum output current capacity allows the diode to handle increased loads without overheating or failing, ensuring reliable performance.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, increasing the efficiency and performance of the diode in high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 10 V

High maximum repetitive peak reverse voltage rating ensures the diode can withstand reverse voltage spikes and transient overloads, enhancing its reliability.

Diode Element Material: SILICON

Silicon diode element material provides good thermal stability and electrical characteristics, ensuring consistent performance over a wide temperature range.

Technical Specifications

Diodes & Rectifiers MBRM110LT3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.175 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PDSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

125 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM110LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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