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MBRM110ET3G

Onsemi

MBRM110ET3G by Onsemi

MBRM110ET3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and a max forward voltage of 0.36V. It operates b/w -55 °C to 150°C, making it suitable for applications requiring high efficiency and low power loss in compact electronic devices. The diode's small outline package style and gull wing terminal form enable easy surface mount installation in various electronic circuits.

Median Price

-

Lifecycle Status

EOL

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USA . 578 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Overview

Discover the exceptional quality and reliability of the Onsemi MBRM110ET3G diode rectifier. Manufactured by Onsemi, a trusted industry leader, this product offers superior performance and durability. Ideal for a wide range of applications, this diode is perfect for high-speed switching power supplies, voltage clamping, and reverse polarity protection. With a maximum output current of 1A and a peak repetitive reverse voltage of 10V, this Schottky technology diode provides efficient power conversion with a low forward voltage drop of just 0.36V. Experience the value and benefits of choosing the Onsemi MBRM110ET3G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, making it durable and reliable.

Config: SINGLE

Single configuration simplifies circuit design and installation process.

Surface Mount: YES

Surface mount capability allows for easy and space-saving PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape ensures efficient use of space on the PCB.

Package Style (Meter): SMALL OUTLINE

Small outline packaging is suitable for applications where space is limited.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various operating conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for operation in harsh environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and connection.

Case Connection: CATHODE

Cathode connection ensures correct polarity and easy identification in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the diode during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and component reliability.

Diode Type: RECTIFIER DIODE

Rectifier diode allows current to flow in only one direction, making it suitable for rectification purposes.

Maximum Forward Voltage (VF): 0.36 V

Low forward voltage drop minimizes power loss and heat generation in the circuit.

Maximum Output Current: 1 A

High output current rating allows the diode to handle sufficient current in the circuit.

Technology: SCHOTTKY

Schottky technology offers fast switching and low forward voltage drop characteristics.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and ease of soldering during assembly.

Maximum Repetitive Peak Reverse Voltage: 10 V

High reverse voltage rating ensures protection against reverse polarity in the circuit.

Maximum Non Repetitive Peak Forward Current: 50 A

High non-repetitive peak forward current handling capability protects the diode during transient overloads.

Diode Element Material: SILICON

Silicon diode element material offers good performance and reliability in various applications.

Technical Specifications

Diodes & Rectifiers MBRM110ET3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.36 V

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

R-PSSO-G1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRM110ET3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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