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MBRD350RLG

Onsemi

MBRD350RLG by Onsemi

MBRD350RLG by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 50V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperatures range from -65°C to 175°C, making it suitable for various electronic devices.

Median Price

$0.192

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 133 parts In-Stock

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$0.192

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$0.175

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$0.157

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Digiode

USA . 929 parts In-Stock

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Vyrian

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

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Nova Conductors

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Aztec Data Supply Inc.

USA . 395 parts In-Stock

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$0.015

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395

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Ampacity Inc.

Singapore . 133 parts In-Stock

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$0.163

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133

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Semicontronic

India . 133 parts In-Stock

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$0.163

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$0.159

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$0.158

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Corphita

USA . 2,204 parts In-Stock

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$0.173

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Corohmni

South Africa . 361 parts In-Stock

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Advanced Electronics

New Zealand . 133 parts In-Stock

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133

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AZTECH Wire

Italy . 240 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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Metaverse IC Inc.

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,554 parts In-Stock

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TANS Electronics

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Continental Prestige Electronics

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Argo Parts USA

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Perfect Parts

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ChipTracer

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UHIMA Technologies

Türkiye . 758 parts In-Stock

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Problanco Electronics

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Bastille Electronics

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Overview

Discover the unparalleled quality and reliability of the MBRD350RLG diode by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge technology and innovation to meet the demands of power applications. This Schottky rectifier diode offers a maximum output current of 3A and a peak repetitive reverse voltage of 50V, making it ideal for a wide range of power-related projects. Experience the value and benefits of choosing Onsemi's MBRD350RLG for your next project - trust in superior performance and efficiency every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resilient, providing protection for the diode and ensuring longevity.

Config: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate into various systems.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs, saving space and enabling efficient assembly.

Package Shape: RECTANGULAR

Rectangular shape offers versatility in placement and allows for easy integration into different types of circuits.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of error during installation.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space, making it ideal for applications where size constraints are a concern.

Application: POWER

Designed specifically for power applications, ensuring reliable performance under high current and voltage conditions.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in demanding environments without compromising performance.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring secure connections during installation.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the chances of wiring errors.

Case Connection: CATHODE

Cathode case connection design ensures proper polarity during installation, preventing reverse bias issues.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes the risk of thermal damage during soldering, ensuring the reliability of the diode.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for secure soldering and ensures the stability of the connection.

Diode Type: RECTIFIER DIODE

Rectifier diode design is ideal for converting AC to DC power, making it suitable for a wide range of applications.

Maximum Forward Voltage (VF): 0.45 V

Low forward voltage drop minimizes power loss and improves efficiency in power conversion applications.

Maximum Output Current: 3 A

High maximum output current capability allows for handling of heavy loads without overheating or damage.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low forward voltage drop, making it efficient for power applications.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and provides mechanical strength to the connection.

Maximum Repetitive Peak Reverse Voltage: 50 V

High repetitive peak reverse voltage rating ensures reliable performance in reverse bias conditions, enhancing the diode's durability.

Maximum Non Repetitive Peak Forward Current: 75 A

High non-repetitive peak forward current capability allows for handling of short-term surges or spikes without damage.

Diode Element Material: SILICON

Silicon diode element material offers good thermal stability and high reliability, ensuring consistent performance over time.

Technical Specifications

Diodes & Rectifiers MBRD350RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

50 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD350RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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