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MBRD320RLG

Onsemi

MBRD320RLG by Onsemi

MBRD320RLG by Onsemi is a Schottky rectifier diode with a max output current of 3A and max forward voltage of 0.45V. It operates in temperatures ranging from -65 °C to 175°C, making it suitable for power applications requiring high efficiency and low forward voltage drop. The diode's small outline package style and gull wing terminal form enable surface mount installation in compact electronic devices.

Median Price

$0.406

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,117 parts In-Stock

1+ parts

$0.419

100+ parts

$0.353

1k+ parts

$0.331

10k+ parts

-

1,117

$0.419

$0.353

$0.331

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Chip1Stop

Japan . 7,966 parts In-Stock

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-

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$0.309

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7,966

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$0.309

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Rochester

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

$0.398

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$0.330

10k+ parts

$0.294

1,800

-

$0.398

$0.330

$0.294

Verical

USA . 1,800 parts In-Stock

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-

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$0.413

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1,800

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$0.413

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Flip Electronics (Authorized)

USA . 769 parts In-Stock

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769

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Digiode

USA . 1,874 parts In-Stock

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$0.250

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1,874

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Vyrian

USA . 3,873 parts In-Stock

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3,873

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Flip Electronics

USA . 769 parts In-Stock

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769

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Prism Electronics

USA . 323 parts In-Stock

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323

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Distributors (Availability)

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Corphita

USA . 2,202 parts In-Stock

1+ parts

$0.237

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2,202

$0.237

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Corohmni

South Africa . 490 parts In-Stock

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$0.263

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490

$0.263

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AZTECH Wire

Italy . 834 parts In-Stock

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$12.810

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834

$12.810

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 17,431 parts In-Stock

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Problanco Electronics

Mexico . 7,780 parts In-Stock

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7,780

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Kulean Microsystems

USA . 4,517 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,319 parts In-Stock

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TANS Electronics

Latvia . 3,192 parts In-Stock

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SupplyDigital Components

Austria . 3,108 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,980 parts In-Stock

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GreenTree Electronics

Israel . 2,950 parts In-Stock

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Continental Prestige Electronics

USA . 1,800 parts In-Stock

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$0.328

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1,800

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$0.328

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UHIMA Technologies

Türkiye . 629 parts In-Stock

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629

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Overview

Unleash the power of efficiency with the MBRD320RLG by Onsemi. Crafted with precision and quality in mind, this Schottky rectifier diode offers unmatched performance in power applications. With a maximum output current of 3A and a maximum forward voltage of only 0.45V, this diode ensures optimal energy conversion. Whether you're looking to enhance your power supply design or improve overall system efficiency, the MBRD320RLG is the perfect solution. Upgrade to Onsemi's superior technology and experience the difference in performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging offers durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures that the diode can withstand a range of environmental conditions without compromising performance.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is ideal for converting AC to DC voltage efficiently, making it suitable for power applications.

Technology: SCHOTTKY

The Schottky technology used in this diode results in low forward voltage drop and fast switching speeds, improving overall efficiency.

Technical Specifications

Diodes & Rectifiers MBRD320RLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.45 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

75 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD320RLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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