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MBRD1035CTLG

Onsemi

MBRD1035CTLG by Onsemi

MBRD1035CTLG by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.56V and a max output current of 5A. It is commonly used in power applications, offering a min breakdown voltage of 35V and operating temperatures ranging from -55°C to 150°C.

Median Price

$0.767

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$0.767

100+ parts

$0.729

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$0.729

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1,000

$0.767

$0.729

$0.729

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DigiKey

USA . 4,610 parts In-Stock

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4,610

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Rochester

USA . 2,196 parts In-Stock

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$0.502

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$0.417

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$0.372

2,196

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$0.502

$0.417

$0.372

Avnet

USA . 1,200 parts In-Stock

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-

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$2.591

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$0.480

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$0.432

1,200

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$2.591

$0.480

$0.432

Distributors (In-Stock)

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DF Sales Co.

USA . 393 parts In-Stock

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$0.400

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393

$0.400

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DF Sales Co.

USA . 393 parts In-Stock

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$0.400

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$0.400

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Flip Electronics

USA . 750 parts In-Stock

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$0.460

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$0.460

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Digiode

USA . 2,162 parts In-Stock

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$0.700

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Nova Conductors

Japan . 500 parts In-Stock

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$0.969

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$0.969

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Chip Stock

USA . 18,124 parts In-Stock

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Vyrian

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J2 Sourcing AB

Sweden . 1,055 parts In-Stock

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DigiKey Marketplace

USA . 750 parts In-Stock

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750

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LIBRA Elektronik GmbH

Germany . 535 parts In-Stock

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535

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LWI Electronics Inc

India . 334 parts In-Stock

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Sensible Micro Corp

USA . 310 parts In-Stock

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Cyclops Electronics Ltd

UK . 285 parts In-Stock

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Speed Components Ltd

Israel . 124 parts In-Stock

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EPE Components Inc.

USA . 105 parts In-Stock

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Bristol Electronics

USA . 105 parts In-Stock

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Component Sense

UK . 86 parts In-Stock

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$8.671

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$8.671

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$8.671

86

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$8.671

$8.671

ComSIT Distribution GmbH

Germany . 86 parts In-Stock

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86

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Holdelec - ElecDif-Pro

France . 75 parts In-Stock

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Classic Components Corporation

USA . 75 parts In-Stock

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Ashlea Components Ltd

UK . 34 parts In-Stock

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Semi Source

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 1,311 parts In-Stock

1+ parts

$0.015

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Corohmni

South Africa . 54 parts In-Stock

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$0.400

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54

$0.400

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Ampacity Inc.

Singapore . 3,231 parts In-Stock

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$0.630

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Semicontronic

India . 3,013 parts In-Stock

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$0.630

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$0.614

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$0.611

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$0.630

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Argo Parts USA

USA . 3,097 parts In-Stock

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$0.657

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$0.637

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Continental Prestige Electronics

USA . 2,325 parts In-Stock

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$0.657

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$0.644

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$0.644

Corphita

USA . 808 parts In-Stock

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$0.663

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808

$0.663

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.767

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$0.729

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$0.729

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$0.729

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Perfect Parts

USA . 56,477 parts In-Stock

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GreenTree Electronics

Israel . 8,400 parts In-Stock

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TANS Electronics

Latvia . 7,054 parts In-Stock

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Problanco Electronics

Mexico . 6,756 parts In-Stock

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SupplyDigital Components

Austria . 6,372 parts In-Stock

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Kulean Microsystems

USA . 1,611 parts In-Stock

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Lixinc

USA . 1,375 parts In-Stock

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Kepictronics

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Assy Fe

Spain . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.950

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$0.921

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$0.901

100

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$0.950

$0.921

$0.901

Overview

Experience the power of the MBRD1035CTLG by Onsemi, a high-quality diode and rectifier that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is known for its exceptional features and benefits. With its common cathode configuration and two elements, it provides seamless functionality and versatility. Whether you need it for power applications or any other purpose, this diode will exceed your expectations. Its compact package shape and surface mount capability make it easy to install and use. Start maximizing your efficiency and productivity with the MBRD1035CTLG by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration into circuit designs and provides precise control over current flow.

Maximum Reverse Current: 2000 uA

Ensures efficient current flow and prevents damage to the diodes.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in various devices and equipment.

Reverse Test Voltage: 35 V

Suitable for applications requiring voltage regulation and protection against reverse currents.

No. of Terminals: 2

Simplifies the installation process and allows for easy connection in circuits.

Application: POWER

Designed for power-related applications, ensuring reliable performance under high load conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: -55 °C

Ensures reliable performance even in low-temperature conditions.

Terminal Finish: MATTE TIN

Provides a reliable and durable terminal finish for secure connections.

Technical Specifications

Diodes & Rectifiers MBRD1035CTLG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Minimum Breakdown Voltage:

35 V

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.56 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

35 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

35 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRD1035CTLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-575-3505, 5961015753505

NIIN

015753505

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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