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MBRB4030G

Onsemi

MBRB4030G by Onsemi

MBRB4030G by Onsemi is a Schottky rectifier diode with a max output current of 40A and max repetitive peak reverse voltage of 30V. It is designed for power applications, featuring a small outline package style and matte tin terminal finish. Operating temperatures range from -65°C to 175°C, making it suitable for various industrial environments.

Median Price

$2.251

Lifecycle Status

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8

In-Stock Inventory

1k+

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

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Digiode

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Bristol Electronics

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LWI Electronics Inc

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Semi Source

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Ampacity Inc.

Singapore . 126 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 854 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Argo Parts USA

USA . 4,794 parts In-Stock

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Continental Prestige Electronics

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AZTECH Wire

Italy . 249 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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Problanco Electronics

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Corphita

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TANS Electronics

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SupplyDigital Components

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UHIMA Technologies

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Kepictronics

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Overview

Upgrade your power applications with the MBRB4030G by Onsemi. Manufactured with top-quality materials and advanced technology, this RECTIFIER DIODE offers unparalleled performance and reliability. Perfect for high-power tasks, this SCHOTTKY diode provides a maximum output current of 40A with a maximum forward voltage of 0.34V. Trust Onsemi to deliver cutting-edge solutions for all your POWER needs. Experience the difference today and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this diode can handle elevated temperatures without compromising performance.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speed, making the diode efficient and suitable for power applications.

Maximum Output Current: 40 A

With a high maximum output current, this diode can handle high levels of current flow without overheating or breaking down.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it ideal for power applications.

Technical Specifications

Diodes & Rectifiers MBRB4030G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.34 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB4030G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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