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MBRB4030T4G

Onsemi

MBRB4030T4G by Onsemi

MBRB4030T4G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.34V and output current of 40A. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

Median Price

$1.887

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Chip1Stop

Japan . 70 parts In-Stock

1+ parts

$3.530

100+ parts

$1.980

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$1.790

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$1.680

70

$3.530

$1.980

$1.790

$1.680

Rochester

USA . 900 parts In-Stock

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-

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$1.430

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$1.280

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$1.210

900

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$1.430

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$1.210

Verical

USA . 900 parts In-Stock

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$1.887

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900

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$1.887

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Avnet

USA . 800 parts In-Stock

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Nova Conductors

Japan . 94 parts In-Stock

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$2.050

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Digiode

USA . 156 parts In-Stock

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$3.021

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Chip Stock

USA . 21,070 parts In-Stock

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Vyrian

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Pegasus Components GmbH

Germany . 800 parts In-Stock

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800

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Resion

USA . 665 parts In-Stock

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665

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Inventory MP

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Bristol Electronics

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Prism Electronics

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Atlantic Semiconductor

USA . 198 parts In-Stock

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Contempo Components LLC

USA . 100 parts In-Stock

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100

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Semi Source

USA . 37 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 335 parts In-Stock

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$0.040

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335

$0.040

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Semicontronic

India . 137 parts In-Stock

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$1.360

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$1.326

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$1.319

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137

$1.360

$1.326

$1.319

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Ampacity Inc.

Singapore . 187 parts In-Stock

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$1.500

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187

$1.500

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Corohmni

South Africa . 363 parts In-Stock

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$1.770

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363

$1.770

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Continental Prestige Electronics

USA . 6,670 parts In-Stock

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$2.050

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$2.009

6,670

$2.050

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$2.009

Argo Parts USA

USA . 1,990 parts In-Stock

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$2.050

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1,990

$2.050

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Bastille Electronics

Australia . 18 parts In-Stock

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$2.050

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$1.948

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$1.850

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$1.824

18

$2.050

$1.948

$1.850

$1.824

Corphita

USA . 1,965 parts In-Stock

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$2.862

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AZTECH Wire

Italy . 146 parts In-Stock

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$21.410

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Lixinc

USA . 15,949 parts In-Stock

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Perfect Parts

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TANS Electronics

Latvia . 7,071 parts In-Stock

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SupplyDigital Components

Austria . 6,397 parts In-Stock

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Kulean Microsystems

USA . 4,143 parts In-Stock

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iodParts Technologies Inc.

India . 1,600 parts In-Stock

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UHIMA Technologies

Türkiye . 923 parts In-Stock

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Kepictronics

USA . 800 parts In-Stock

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Problanco Electronics

Mexico . 287 parts In-Stock

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GreenTree Electronics

Israel . 103 parts In-Stock

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Authorized Procurement Solutions

USA . 71 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 56 parts In-Stock

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Overview

Unleash the power of Onsemi's MBRB4030T4G diode rectifier, a game-changer in the world of electronic components. With a reputation for top-quality manufacturing, Onsemi has crafted a product that delivers unmatched performance and reliability in power applications. Imagine seamless integration, efficient power management, and enhanced durability all in one small outline package. Whether you're working on a DIY project or a professional application, this Schottky technology diode offers a maximum output current of 40A and a maximum repetitive peak reverse voltage of 30V, making it the perfect choice for your power needs. Elevate your projects with the Onsemi advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode light-weight and resistant to high temperatures, making it suitable for a variety of power applications.

Config: SINGLE

The single configuration simplifies the circuit design and makes installation easier.

Surface Mount: YES

Being surface mountable enables easy and compact assembly on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement and orientation within circuit layouts.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature ensures the diode can withstand high power and temperature conditions without degradation.

Technology: SCHOTTKY

The Schottky technology offers lower forward voltage drop and faster switching speeds compared to standard silicon diodes, making it ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBRB4030T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.34 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

300 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB4030T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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