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MBRB1545CTT4G

Onsemi

MBRB1545CTT4G by Onsemi

MBRB1545CTT4G by Onsemi is a Schottky rectifier diode with 45V reverse voltage and 7.5A output current, suitable for power applications. It features a common cathode configuration, matte tin terminal finish, and can operate b/w -65°C to 175°C. This small outline package with dual terminals is designed for surface mount assembly.

Median Price

$0.731

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

1k+

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Adafruit Industries

USA . 500 parts In-Stock

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Farnell

UK . 384 parts In-Stock

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Element14

Singapore . 384 parts In-Stock

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$1.840

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Mouser Electronics

USA . 11,472 parts In-Stock

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$0.730

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DigiKey

USA . 6,923 parts In-Stock

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$2.490

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Arrow

USA . 12,800 parts In-Stock

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Verical

USA . 12,800 parts In-Stock

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Chip1Stop

Japan . 8,800 parts In-Stock

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Rochester

USA . 2,023 parts In-Stock

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$0.867

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Future Electronics

Canada . 800 parts In-Stock

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Newark

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Digiode

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Nova Conductors

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IBS Electronics

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Vyrian

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Component Sense

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NAC Semi

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Rebound Electronics

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ComSIT Distribution GmbH

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ACDS - Activité Composants Distribution Service

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Lantek

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Atlantic Semiconductor

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Contempo Components LLC

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PC Components Company LLC

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LIBRA Elektronik GmbH

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Andel Nordic

Denmark . 3,199 parts In-Stock

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$0.088

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$0.085

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Ampacity Inc.

Singapore . 12,391 parts In-Stock

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Semicontronic

India . 11,092 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,191 parts In-Stock

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Corphita

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Corohmni

South Africa . 100 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Argo Parts USA

USA . 505 parts In-Stock

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Continental Prestige Electronics

USA . 66 parts In-Stock

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$0.769

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Bastille Electronics

Australia . 500 parts In-Stock

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$0.947

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$0.900

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$0.855

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$0.843

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$0.843

Microchip USA

USA . 3,121 parts In-Stock

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$6.155

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$6.117

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$6.117

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Authorized Procurement Solutions

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SupplyDigital Components

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Cyclops Electronics Ltd (Excess)

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Kepictronics

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iodParts Technologies Inc.

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Metaverse IC Inc.

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UHIMA Technologies

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GreenTree Electronics

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Glotronic Ltd.

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Kulean Microsystems

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Overview

Enhance the power and efficiency of your electronic devices with the MBRB1545CTT4G diode by Onsemi. Crafted with precision and expertise, this diode offers unmatched quality and reliability for various power applications. Whether you're looking to optimize your power supply or enhance circuit protection, this diode's Schottky technology ensures superior performance. Trust in Onsemi's reputation for excellence and experience the value and benefits that the MBRB1545CTT4G brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan and reliability.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy integration and connection in circuits, offering versatility in design.

Surface Mount: YES

Simplifies the PCB assembly process, saving time and labor costs.

Maximum Operating Temperature: 175 °C

Can handle high-temperature environments, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

Efficiently converts AC to DC, essential for power applications.

Maximum Output Current: 7.5 A

Capable of handling high current loads, making it suitable for power-intensive circuits.

Technology: SCHOTTKY

Provides low forward voltage drop and fast switching, enhancing efficiency and performance.

Maximum Repetitive Peak Reverse Voltage: 45 V

Offers robust reverse voltage protection, safeguarding the circuit against voltage spikes.

Technical Specifications

Diodes & Rectifiers MBRB1545CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

7.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB1545CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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