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MBRB40250TT4G

Onsemi

MBRB40250TT4G by Onsemi

MBRB40250TT4G by Onsemi is a Schottky rectifier diode with a max output current of 40A and forward voltage of 0.71V. It operates efficiently at temperatures ranging from -65 to 150°C, making it ideal for high-power applications requiring fast switching speeds. The diode's small outline package and single terminal position enable easy surface mount installation in various electronic circuits.

Median Price

$1.180

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 520 parts In-Stock

1+ parts

$1.180

100+ parts

$1.110

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$1.000

10k+ parts

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520

$1.180

$1.110

$1.000

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Avnet

USA . 800 parts In-Stock

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800

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Digiode

USA . 1,986 parts In-Stock

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$1.121

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$1.121

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Chip Stock

USA . 37,000 parts In-Stock

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Sensible Micro Corp

USA . 9,256 parts In-Stock

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Vyrian

USA . 3,877 parts In-Stock

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Nova Conductors

Japan . 48 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 142 parts In-Stock

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$0.050

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-

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142

$0.050

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Advanced Electronics

New Zealand . 39 parts In-Stock

1+ parts

$0.186

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$0.177

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$0.177

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39

$0.186

$0.177

$0.177

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Semicontronic

India . 861 parts In-Stock

1+ parts

$1.000

100+ parts

$0.975

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$0.970

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861

$1.000

$0.975

$0.970

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Ampacity Inc.

Singapore . 835 parts In-Stock

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$1.000

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835

$1.000

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Corphita

USA . 521 parts In-Stock

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$1.062

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521

$1.062

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Corohmni

South Africa . 178 parts In-Stock

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$1.180

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178

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Lixinc

USA . 12,072 parts In-Stock

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TANS Electronics

Latvia . 7,557 parts In-Stock

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SupplyDigital Components

Austria . 6,165 parts In-Stock

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Robosynatics

Brazil . 3,503 parts In-Stock

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Lucentia Tech

USA . 3,503 parts In-Stock

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$0.050

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$0.049

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$0.049

3,503

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$0.050

$0.049

$0.049

Continental Prestige Electronics

USA . 3,228 parts In-Stock

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Argo Parts USA

USA . 1,961 parts In-Stock

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Problanco Electronics

Mexico . 1,089 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Kulean Microsystems

USA . 169 parts In-Stock

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UHIMA Technologies

Türkiye . 112 parts In-Stock

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Modulus Dynamics

Lithuania . 72 parts In-Stock

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Overview

Unleash the power of efficiency with the MBRB40250TT4G by Onsemi! This top-of-the-line rectifier diode offers unmatched quality and reliability, making it the perfect choice for a wide range of applications. Whether you're looking to improve your power supply, increase energy efficiency, or enhance overall performance, this diode has got you covered. With a maximum output current of 40 A and a maximum reverse recovery time of just 0.035 us, you can trust that this diode will deliver exceptional results every time. Upgrade your electronics with the MBRB40250TT4G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable packaging material ensures long-lasting performance.

Config: SINGLE

Simplified design for easy integration and usage.

Surface Mount: YES

Easily mountable on circuit boards for efficient assembly.

Maximum Reverse Recovery Time: 0.035 us

Fast reverse recovery time for improved efficiency and performance.

Package Shape: RECTANGULAR

Space-saving design for compact electronic applications.

Application: EFFICIENCY

Specifically designed for efficiency-focused applications, ensuring optimal performance.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures without compromising performance.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows for versatile use in various environments.

Terminal Finish: MATTE TIN

Corrosion-resistant terminal finish for reliable connections.

Diode Type: RECTIFIER DIODE

Designed specifically as a rectifier diode for efficient energy conversion.

Maximum Forward Voltage (VF): 0.71 V

Low forward voltage drop for reduced power loss and improved efficiency.

Maximum Output Current: 40 A

High output current capability for demanding applications.

Technology: SCHOTTKY

Schottky technology for fast switching and low forward voltage drop.

Maximum Repetitive Peak Reverse Voltage: 250 V

Can handle high reverse voltages for versatile applications.

Diode Element Material: SILICON

Silicon diode element for reliable and stable performance.

Technical Specifications

Diodes & Rectifiers MBRB40250TT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

250 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB40250TT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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