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MBRB1645T4G

Onsemi

MBRB1645T4G by Onsemi

MBRB1645T4G by Onsemi is a Schottky rectifier diode with a max output current of 16A and forward voltage of 0.57V. It operates b/w -65°C to 175°C, making it suitable for power applications. This single-configured diode comes in a small outline package with gull wing terminals for surface mount assembly.

Median Price

$0.534

Lifecycle Status

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18

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1k+

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Adafruit Industries

USA . 40 parts In-Stock

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Rochester

USA . 1,307 parts In-Stock

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Avnet

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Arrow

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Verical

USA . 1,600 parts In-Stock

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Chip1Stop

Japan . 1,600 parts In-Stock

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Digiode

USA . 2,478 parts In-Stock

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Nova Conductors

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Chip Stock

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Vyrian

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J2 Sourcing AB

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ACDS - Activité Composants Distribution Service

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Semi Source

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Speed Components Ltd

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Cyclops Electronics Ltd

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PC Components Company LLC

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Bristol Electronics

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Modulus Dynamics

Lithuania . 29,663 parts In-Stock

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$0.097

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Semicontronic

India . 964 parts In-Stock

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Ampacity Inc.

Singapore . 729 parts In-Stock

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Corphita

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Corohmni

South Africa . 349 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Aztec Data Supply Inc.

USA . 75 parts In-Stock

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$0.169

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Continental Prestige Electronics

USA . 5,603 parts In-Stock

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Argo Parts USA

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Netroflash

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Benley Electronics

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AZTECH Wire

Italy . 349 parts In-Stock

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RC Electronics

USA . 64,368 parts In-Stock

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Perfect Parts

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Lucentia Tech

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Lixinc

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Kulean Microsystems

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SupplyDigital Components

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Microchip USA

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Component Stockers USA

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UHIMA Technologies

Türkiye . 820 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Formix International (Excess)

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Overview

Ideal for power applications, the MBRB1645T4G by Onsemi is a top-of-the-line rectifier diode that guarantees high-quality performance. With a maximum repetitive peak reverse voltage of 45V and a maximum output current of 16A, this Schottky diode offers exceptional reliability and efficiency. Onsemi's reputation for producing premium electronic components ensures that customers can trust in the durability and longevity of this product. Whether you're looking to upgrade your power supply or enhance the performance of your electronics, the MBRB1645T4G is the perfect solution for all your power needs. Experience the superior quality and unmatched value that Onsemi brings to the table with this innovative diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability, making the product suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and facilitating automated assembly.

Application: POWER

Designed specifically for power applications, ensuring efficient and reliable performance in power-related circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures the diode can withstand elevated temperatures without performance degradation.

Technology: SCHOTTKY

Schottky diode technology offers fast switching speeds and lower forward voltage drop, enhancing efficiency in power conversion applications.

Technical Specifications

Diodes & Rectifiers MBRB1645T4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.57 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

16 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

45 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRB1645T4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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