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MBRA210ET3

Onsemi

MBRA210ET3 by Onsemi

MBRA210ET3 by Onsemi is a Schottky rectifier diode with max output current of 2A and max forward voltage of 0.275V. It is designed for power applications, operating at up to 150 °C, in a small outline package suitable for surface mount technology.

Median Price

$0.079

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 466 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

466

-

$0.079

$0.066

$0.059

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,941 parts In-Stock

1+ parts

$0.062

100+ parts

-

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1,941

$0.062

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Vyrian

USA . 8,736 parts In-Stock

1+ parts

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8,736

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Chip Stock

USA . 2,860 parts In-Stock

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2,860

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Goldney Electronics S.L.

Spain . 1,081 parts In-Stock

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1,081

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Distributors (Availability)

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Corphita

USA . 50 parts In-Stock

1+ parts

$0.058

100+ parts

-

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50

$0.058

-

-

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Corohmni

South Africa . 257 parts In-Stock

1+ parts

$0.065

100+ parts

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257

$0.065

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AZTECH Wire

Italy . 667 parts In-Stock

1+ parts

$10.790

100+ parts

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667

$10.790

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Kepictronics

USA . 40,000 parts In-Stock

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40,000

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Problanco Electronics

Mexico . 6,094 parts In-Stock

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6,094

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SupplyDigital Components

Austria . 4,642 parts In-Stock

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4,642

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Kulean Microsystems

USA . 3,688 parts In-Stock

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3,688

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UHIMA Technologies

Türkiye . 921 parts In-Stock

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921

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TANS Electronics

Latvia . 240 parts In-Stock

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240

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Overview

Unlock the power of quality and reliability with the MBRA210ET3 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch diodes and rectifiers that are perfect for power applications. With its small outline package and dual terminal position, this Schottky technology diode offers maximum output current of 2A and a low forward voltage of 0.275V, making it ideal for various power needs. Trust Onsemi to provide you with the value, benefits, and advantages you need to succeed in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Being made of plastic/epoxy material makes this product lightweight and durable, ideal for applications where weight and durability are important.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on a PCB, saving time and simplifying the manufacturing process.

Application: POWER

Designed for power applications, this diode rectifier can handle high current and voltage levels, making it suitable for a wide range of power-related tasks.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this diode rectifier can operate reliably in harsh environmental conditions without any issue.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed to convert AC voltage to DC voltage efficiently, making it a reliable choice for rectification tasks.

Maximum Forward Voltage (VF): 0.275 V

The low maximum forward voltage ensures minimal power loss during the forward conduction of the diode, making it energy efficient in power conversion applications.

Maximum Output Current: 2 A

Capable of handling a maximum output current of 2A, this diode rectifier can support high power loads with ease, making it suitable for demanding power applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode rectifier offers fast switching speed and low forward voltage drop, making it a reliable choice for high-frequency and high-efficiency applications.

Maximum Repetitive Peak Reverse Voltage: 10 V

With a high maximum repetitive peak reverse voltage of 10V, this diode rectifier can withstand reverse voltage spikes and fluctuations, ensuring reliable and stable operation.

Diode Element Material: SILICON

Made of silicon, a commonly used semiconductor material, this diode rectifier offers good electrical properties, high reliability, and consistent performance, making it a trusted choice for a variety of applications.

Technical Specifications

Diodes & Rectifiers MBRA210ET3 attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.275 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

10 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA210ET3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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