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MBR41H100CTG

Onsemi

MBR41H100CTG by Onsemi

MBR41H100CTG by Onsemi is a Schottky rectifier diode with 2 elements, common cathode configuration, and max repetitive peak reverse voltage of 100V. It has a max output current of 20A and forward voltage of 0.67V, making it ideal for high-efficiency applications at temperatures up to 175°C.

Median Price

$1.525

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1 parts In-Stock

1+ parts

$0.273

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$0.273

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$0.273

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1

$0.273

$0.273

$0.273

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Arrow

USA . 3 parts In-Stock

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$0.677

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$0.677

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Chip1Stop

Japan . 3 parts In-Stock

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$1.237

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3

$1.237

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Farnell

UK . 391 parts In-Stock

1+ parts

$2.300

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$1.070

1k+ parts

$1.030

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391

$2.300

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$1.030

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Mouser Electronics

USA . 271 parts In-Stock

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$2.750

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271

$2.750

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DigiKey

USA . 87 parts In-Stock

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$2.780

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$1.159

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$1.082

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87

$2.780

$1.159

$1.082

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Element14

Singapore . 391 parts In-Stock

1+ parts

$3.870

100+ parts

$1.800

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$1.730

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391

$3.870

$1.800

$1.730

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Rochester

USA . 349,060 parts In-Stock

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-

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$1.470

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$1.220

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$1.090

349,060

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$1.470

$1.220

$1.090

Verical

USA . 340,000 parts In-Stock

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$1.525

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$1.363

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$1.363

Avnet

USA . 250 parts In-Stock

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Digiode

USA . 257 parts In-Stock

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$0.576

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$0.576

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TME

Poland . 97 parts In-Stock

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$2.650

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$1.630

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97

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$1.630

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Vyrian

USA . 3,186 parts In-Stock

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IBS Electronics

USA . 1,850 parts In-Stock

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$1.404

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$1.339

10k+ parts

$1.268

1,850

-

$1.404

$1.339

$1.268

Flip Electronics

USA . 1,550 parts In-Stock

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1,550

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NAC Semi

USA . 1,000 parts In-Stock

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$2.840

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$2.550

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1,000

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$2.840

$2.550

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Diverse Electronics

Canada . 100 parts In-Stock

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100

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Nova Conductors

Japan . 50 parts In-Stock

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Inventory MP

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5

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Bristol Electronics

USA . 5 parts In-Stock

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5

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Distributors (Availability)

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Corphita

USA . 545 parts In-Stock

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$0.545

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545

$0.545

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Corohmni

South Africa . 60 parts In-Stock

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$0.606

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60

$0.606

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Benley Electronics

USA . 1 parts In-Stock

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$1.000

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Ampacity Inc.

Singapore . 43,517 parts In-Stock

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$1.020

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$1.020

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Continental Prestige Electronics

USA . 149 parts In-Stock

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$1.670

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$1.210

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$1.160

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149

$1.670

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$1.160

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Andel Nordic

Denmark . 4,450 parts In-Stock

1+ parts

$3.536

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$3.395

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$3.395

4,450

$3.536

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$3.395

$3.395

Microchip USA

USA . 347 parts In-Stock

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$7.475

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347

$7.475

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RC Electronics

USA . 47,392 parts In-Stock

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$1.360

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$1.240

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$1.200

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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Kepictronics

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A-Z Elektronik GmbH

Germany . 4,902 parts In-Stock

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TANS Electronics

Latvia . 4,395 parts In-Stock

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Problanco Electronics

Mexico . 2,878 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,846 parts In-Stock

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Kulean Microsystems

USA . 2,608 parts In-Stock

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SupplyDigital Components

Austria . 2,564 parts In-Stock

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Perfect Parts

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Netroflash

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UHIMA Technologies

Türkiye . 500 parts In-Stock

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500

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Overview

Enhance the efficiency of your applications with the MBR41H100CTG diode by Onsemi. Manufactured with top-quality materials and advanced Schottky technology, this diode offers a reliable solution for common cathode configurations in various electronic devices. With a maximum output current of 20A and a maximum repetitive peak reverse voltage of 100V, this product ensures optimal performance and durability. Trust Onsemi to deliver exceptional products that provide value and benefits to customers looking for high-quality diodes & rectifiers for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy connection in circuits, and having 2 elements provides redundancy and stability.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this diode can withstand high temperatures, ensuring reliable performance in various environments.

Maximum Output Current: 20 A

Capable of handling a maximum output current of 20 A, making it suitable for high-power applications.

Technology: SCHOTTKY

Schottky diodes offer fast switching speeds and low forward voltage drop, which are beneficial for efficiency and reducing power losses.

Technical Specifications

Diodes & Rectifiers MBR41H100CTG attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

LOW POWER LOSS

Application:

EFFICIENCY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.67 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

20 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

MBR41H100CTG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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