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LV8130V

Onsemi

LV8130V by Onsemi

LV8130V by Onsemi is a Motion Control IC with 30 terminals, BICMOS technology, and 12V nominal voltage. It operates in industrial temperature range (-40 to 100 °C) and has a max supply current of 6mA. Ideal for applications requiring precise motion control in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,460 parts In-Stock

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Digiode

USA . 1,398 parts In-Stock

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1,398

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Distributors (Availability)

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Problanco Electronics

Mexico . 5,255 parts In-Stock

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TANS Electronics

Latvia . 4,084 parts In-Stock

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Corphita

USA . 1,686 parts In-Stock

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SupplyDigital Components

Austria . 1,685 parts In-Stock

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UHIMA Technologies

Türkiye . 943 parts In-Stock

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943

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Corohmni

South Africa . 359 parts In-Stock

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Kulean Microsystems

USA . 138 parts In-Stock

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Overview

Elevate your motion control applications with the LV8130V from Onsemi. Designed with precision and quality in mind, this innovative IC offers unparalleled performance and reliability. With its advanced technology and industrial-grade temperature grade, you can trust that your systems will operate seamlessly in any environment. The LV8130V is the perfect solution for a wide range of applications, providing customers with exceptional value and benefits. Upgrade to Onsemi's LV8130V today and experience the difference in motion control excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the IC, making it suitable for various applications.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup): 12 V

Operates efficiently at a standard voltage level commonly used in many electronic systems.

Maximum Operating Temperature: 100 °C

Can withstand high temperatures, making it suitable for industrial environments where heat may be a concern.

Technology: BICMOS

Utilizes a combination of bipolar and CMOS technologies, offering high-performance and low-power consumption benefits.

Technical Specifications

Motion Control ICs LV8130V attributes and parameters. Explore more Motion Control ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G30

No. of Terminals:

30

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP30,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Power Supplies (V):

12

Qualification:

Not Qualified

Sub-Category:

Motion Control Electronics

Maximum Supply Current (Isup):

6 mA

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Trade Compliance

LV8130V Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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