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LA72910V-MPB-H

Onsemi

LA72910V-MPB-H by Onsemi

LA72910V-MPB-H by Onsemi is a 16-terminal IC with 5V supply voltage, operating b/w -30 to 70 °C. It features Gull Wing terminals, PLASTIC/EPOXY body material, and is surface mountable. Ideal for telecom interfaces due to its small outline package style and dual terminal position.

Median Price

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Lifecycle Status

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Vyrian

USA . 11,755 parts In-Stock

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AZTECH Wire

Italy . 783 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 29,987 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 5,324 parts In-Stock

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Problanco Electronics

Mexico . 4,373 parts In-Stock

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SupplyDigital Components

Austria . 3,627 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 884 parts In-Stock

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Corohmni

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Microchip USA

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Overview

Elevate your telecom interface systems with the LA72910V-MPB-H by Onsemi. Crafted with precision and reliability, this product offers seamless connectivity and optimal performance. Designed for efficiency and ease of use, this IC is perfect for a wide range of applications. With Onsemi's trusted reputation for quality and innovation, you can trust that this product delivers unparalleled value and benefits to enhance your projects. Upgrade your systems today with the LA72910V-MPB-H and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Power Supplies (V): 5

The product operates at a standard voltage of 5V, making it compatible with a wide range of systems and devices.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, the product can function reliably in various environments without overheating.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides good conductivity and solderability, ensuring stable connections for optimal performance.

Nominal Supply Voltage: 5 V

Having a nominal supply voltage of 5V simplifies power compatibility and ensures consistent operation within the specified voltage range.

Technical Specifications

Other Function Telecom Interface ICs LA72910V-MPB-H attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LA72910V-MPB-H Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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