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J113RLRA

Onsemi

J113RLRA by Onsemi

J113RLRA by Onsemi is a N-CHANNEL FET with 100 ohm RDS(on) and 5 pF Crss. Ideal for CHOPPER applications, it operates in DEPLETION MODE at up to 150 °C. Its THROUGH-HOLE terminals and SILICON material make it suitable for various electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,081 parts In-Stock

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2,081

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Vyrian

USA . 860 parts In-Stock

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860

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TANS Electronics

Latvia . 6,921 parts In-Stock

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6,921

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Kulean Microsystems

USA . 3,850 parts In-Stock

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3,850

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SupplyDigital Components

Austria . 2,059 parts In-Stock

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Problanco Electronics

Mexico . 1,106 parts In-Stock

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Corphita

USA . 514 parts In-Stock

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514

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UHIMA Technologies

Türkiye . 318 parts In-Stock

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318

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Corohmni

South Africa . 259 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the J113RLRA by Onsemi. Crafted with precision and expertise, this small signal field-effect transistor offers unparalleled performance and reliability. Perfect for applications like choppers, this N-channel transistor is a game-changer in the world of electronics. With a maximum operating temperature of 150 °C and a low drain-source on resistance of 100 ohms, this transistor ensures optimal efficiency and functionality. Trust Onsemi to deliver quality products that exceed expectations. Elevate your circuits with the J113RLRA and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for small signal applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better conductivity and switching characteristics compared to P-channel transistors, making this product suitable for fast switching applications.

Configuration: SINGLE

Single configuration transistors are easier to manage and control in circuit designs, simplifying the overall design process.

Transistor Application: CHOPPER

Designed for chopper applications, this transistor is optimized for high-frequency switching and efficient power control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand heat and operate reliably in various environmental conditions.

Maximum Drain-Source On Resistance: 100 ohm

A low drain-source on resistance of 100 ohm ensures efficient power transfer and minimizes power loss in the circuit.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance of 5 pF helps reduce signal distortion and improve high-frequency performance in the circuit.

Technical Specifications

Small Signal Field Effect Transistors (FET) J113RLRA attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain-Source On Resistance:

100 ohm

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

CHOPPER

Transistor Element Material:

SILICON

Trade Compliance

J113RLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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