Loading...

FGB3236-F085

Onsemi

FGB3236-F085 by Onsemi

FGB3236-F085 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 350V and max collector current of 44A. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With surface mount capability, it offers fast rise time (tr) of 7000ns and fall time (tf) of 15000ns.

Median Price

$2.245

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

1+ parts

$0.387

100+ parts

$0.352

1k+ parts

$0.317

10k+ parts

-

270

$0.387

$0.352

$0.317

-

Mouser Electronics

USA . 347 parts In-Stock

1+ parts

$3.680

100+ parts

$2.420

1k+ parts

$2.130

10k+ parts

$2.010

347

$3.680

$2.420

$2.130

$2.010

Rochester

USA . 22,400 parts In-Stock

1+ parts

-

100+ parts

$1.940

1k+ parts

$1.730

10k+ parts

$1.630

22,400

-

$1.940

$1.730

$1.630

DigiKey

USA . 22,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.550

10k+ parts

-

22,400

-

-

$2.550

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,602 parts In-Stock

1+ parts

$0.368

100+ parts

-

1k+ parts

-

10k+ parts

-

1,602

$0.368

-

-

-

Vyrian

USA . 1,926 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

-

1,926

$0.387

-

-

-

DigiKey Marketplace

USA . 22,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22,400

-

-

-

-

Flip Electronics

USA . 800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

800

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 3,256 parts In-Stock

1+ parts

$0.348

100+ parts

-

1k+ parts

-

10k+ parts

-

3,256

$0.348

-

-

-

Corohmni

South Africa . 409 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

-

409

$0.387

-

-

-

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.387

100+ parts

$0.352

1k+ parts

$0.317

10k+ parts

-

270

$0.387

$0.352

$0.317

-

Microchip USA

USA . 204 parts In-Stock

1+ parts

$8.905

100+ parts

-

1k+ parts

-

10k+ parts

-

204

$8.905

-

-

-

Perfect Parts

USA . 216,712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

216,712

-

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 14,852 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

14,852

-

-

-

-

Problanco Electronics

Mexico . 5,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,516

-

-

-

-

Kulean Microsystems

USA . 4,712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,712

-

-

-

-

Authorized Procurement Solutions

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,500

-

-

-

-

TANS Electronics

Latvia . 2,472 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,472

-

-

-

-

Northwest PG Solutions

USA . 2,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,206

-

-

-

-

Supply Digital

USA . 1,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,050

-

-

-

-

SupplyDigital Components

Austria . 1,037 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,037

-

-

-

-

Native Components

USA . 985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

985

-

-

-

-

UHIMA Technologies

Türkiye . 193 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

193

-

-

-

-

Overview

Experience the superior performance of the FGB3236-F085 by Onsemi, a top-of-the-line Insulated Gate Bipolar Transistor tailor-made for automotive ignition applications. With a single configuration featuring a built-in diode and resistor, this product guarantees reliability and efficiency. Onsemi's reputation for high-quality components ensures that you're investing in a durable and long-lasting solution. Say goodbye to frequent replacements and hello to seamless operation with the FGB3236-F085. Trust in Onsemi to deliver innovation and excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the IGBT, making it suitable for various applications.

Transistor Application: AUTOMOTIVE IGNITION

Designed specifically for automotive ignition applications, ensuring reliable and efficient performance in automotive systems.

Maximum Power Dissipation (Abs): 187 W

With a high maximum power dissipation capacity, this IGBT can handle high power loads without overheating, making it ideal for demanding applications.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating allows this IGBT to handle high voltage levels safely, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 44 A

With a high maximum collector current rating, this IGBT can handle high current levels, making it suitable for applications that require a large amount of current.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this IGBT can operate effectively in high-temperature environments, ensuring reliability and longevity.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FGB3236-F085 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.2 V

Maximum Gate-Emitter Voltage:

12 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

7040 ns

Nominal Turn On Time (ton):

2350 ns

Trade Compliance

FGB3236-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 11