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FDY102PZ

Onsemi

FDY102PZ by Onsemi

The Onsemi FDY102PZ is a P-CHANNEL FET with 20V DS Breakdown Voltage and 0.83A Drain Current. Ideal for small outline applications, it operates in Enhancement Mode with 0.5 ohm On Resistance. With a max power dissipation of 0.625W, it can withstand temperatures from -55 to 150 °C.

Median Price

$0.108

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 400 parts In-Stock

1+ parts

$0.031

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$0.031

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400

$0.031

$0.031

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Arrow

USA . 1,042 parts In-Stock

1+ parts

$0.075

100+ parts

$0.072

1k+ parts

$0.069

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1,042

$0.075

$0.072

$0.069

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Farnell

UK . 1 parts In-Stock

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$0.248

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1

$0.248

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Mouser Electronics

USA . 63,041 parts In-Stock

1+ parts

$0.460

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$0.218

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$0.115

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$0.089

63,041

$0.460

$0.218

$0.115

$0.089

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$2.260

100+ parts

$2.057

1k+ parts

$1.853

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500

$2.260

$2.057

$1.853

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Master Electronics

USA . 12,000 parts In-Stock

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$0.072

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$0.072

Flip Electronics (Authorized)

USA . 6,000 parts In-Stock

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6,000

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Rochester

USA . 5,190 parts In-Stock

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-

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$0.097

1k+ parts

$0.080

10k+ parts

$0.071

5,190

-

$0.097

$0.080

$0.071

Verical

USA . 5,190 parts In-Stock

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$0.121

5,190

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$0.121

Chip1Stop

Japan . 2,440 parts In-Stock

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-

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$0.108

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$0.068

10k+ parts

$0.067

2,440

-

$0.108

$0.068

$0.067

Distributors (In-Stock)

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Digiode

USA . 2,149 parts In-Stock

1+ parts

$0.029

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2,149

$0.029

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Nova Conductors

Japan . 84 parts In-Stock

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$0.133

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84

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Chip Stock

USA . 67,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 59,558 parts In-Stock

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59,558

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IBS Electronics

USA . 42,000 parts In-Stock

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$0.094

42,000

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$0.094

Vyrian

USA . 19,427 parts In-Stock

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19,427

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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9,000

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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Sensible Micro Corp

USA . 2,000 parts In-Stock

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2,000

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Classic Components Corporation

USA . 1,611 parts In-Stock

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1,611

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Inventory MP

USA . 435 parts In-Stock

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435

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Bristol Electronics

USA . 279 parts In-Stock

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279

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ACDS - Activité Composants Distribution Service

France . 29 parts In-Stock

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Holdelec - ElecDif-Pro

France . 29 parts In-Stock

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Prism Electronics

USA . 17 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 19,363 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

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$0.025

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19,363

$0.026

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$0.025

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Corphita

USA . 2,697 parts In-Stock

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$0.028

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2,697

$0.028

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Corohmni

South Africa . 470 parts In-Stock

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$0.031

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470

$0.031

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Ampacity Inc.

Singapore . 19,638 parts In-Stock

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$0.058

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19,638

$0.058

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Aranea Global

USA . 2,000 parts In-Stock

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$0.130

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$0.125

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2,000

$0.130

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$0.125

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Continental Prestige Electronics

USA . 3,783 parts In-Stock

1+ parts

$0.133

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$0.130

3,783

$0.133

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$0.130

Argo Parts USA

USA . 1,685 parts In-Stock

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$0.133

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$0.129

1,685

$0.133

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$0.129

Aztec Data Supply Inc.

USA . 4,872 parts In-Stock

1+ parts

$1.747

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4,872

$1.747

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.260

100+ parts

$2.057

1k+ parts

$1.853

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500

$2.260

$2.057

$1.853

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Andel Nordic

Denmark . 2,475 parts In-Stock

1+ parts

$3.059

100+ parts

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$2.936

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$2.936

2,475

$3.059

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$2.936

$2.936

Perfect Parts

USA . 94,104 parts In-Stock

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Kepictronics

USA . 65,800 parts In-Stock

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65,800

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QUARKTWIN TECHNOLOGY LTD

USA . 27,597 parts In-Stock

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27,597

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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Problanco Electronics

Mexico . 7,802 parts In-Stock

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iodParts Technologies Inc.

India . 3,620 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 2,798 parts In-Stock

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2,798

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Lixinc

USA . 1,672 parts In-Stock

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1,672

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TANS Electronics

Latvia . 883 parts In-Stock

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883

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Supply Digital

USA . 288 parts In-Stock

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288

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Kulean Microsystems

USA . 276 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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166

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Overview

Discover the power of innovation with the FDY102PZ by Onsemi. As a leading manufacturer in the industry, Onsemi delivers unparalleled quality and reliability in their small signal field effect transistors. Ideal for a wide range of applications, this P-channel FET offers enhanced performance and efficiency with its built-in diode configuration. Experience the value of superior technology with the FDY102PZ, providing customers with exceptional benefits and advantages that set it apart from the rest. Elevate your projects with Onsemi's cutting-edge transistor technology and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and less prone to damage during installation.

Polarity or Channel Type: P-CHANNEL

P-Channel FETs typically have higher electron mobility, which can result in faster switching speeds and lower on-resistance, making them suitable for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides reverse voltage protection and simplifies circuit design, making this transistor a convenient choice for various applications.

Surface Mount: YES

Surface mount transistors are easy to mount on PCBs, saving space and allowing for automated assembly processes, making them ideal for mass production.

Minimum DS Breakdown Voltage: 20 V

The high breakdown voltage allows this transistor to handle higher voltage applications, increasing its versatility.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and orientation on the PCB, simplifying the manufacturing process.

Configuration: SINGLE WITH BUILT-IN DIODE

Gull wing terminals provide strong solder joints and reliable electrical connections, ensuring stability and efficiency in the circuit.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors require no bias to operate, offering better control and flexibility in circuit design.

Maximum Drain Current (Abs) (ID): 0.83 A

The high drain current capability allows this transistor to handle higher currents, making it suitable for power applications.

No. of Terminals: 3

Three terminals allow for easy connection to other components, enhancing the flexibility and usability of the transistor.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation rating, this transistor can handle higher power levels without overheating, ensuring reliability in operation.

Package Style (Meter): SMALL OUTLINE

Small outline packages save space on the PCB, making them suitable for compact designs and portable devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFETs offer high input impedance and fast switching speeds, making them ideal for high-frequency applications and efficient power amplification.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this transistor to operate reliably in a wide range of environments, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage current, and stable performance over a wide temperature range.

Minimum Operating Temperature: -55 °C

The wide temperature range allows this transistor to operate in extreme cold conditions, making it suitable for use in various environments.

Terminal Finish: MATTE TIN

Matte tin terminals provide good solderability and corrosion resistance, ensuring reliable connections and long-term performance.

Maximum Drain-Source On Resistance: 0.5 ohm

Low on-resistance results in reduced power losses and improved efficiency in the circuit, making this transistor a cost-effective choice for power applications.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and component placement, making it easier to integrate this transistor into different designs.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures proper soldering and prevents thermal damage to the transistor during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and ensures the durability of the transistor in harsh operating conditions.

Maximum Feedback Capacitance (Crss): 30 pF

Low feedback capacitance minimizes signal distortion and improves signal integrity, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDY102PZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.83 A

Maximum Drain Current (ID):

.83 A

Maximum Drain-Source On Resistance:

.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

FDY102PZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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