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FDY101PZ

Onsemi

FDY101PZ by Onsemi

FDY101PZ by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage, 0.15A max drain current, and 8 ohm max on resistance. Ideal for small outline applications requiring a single configuration with built-in diode in surface mount packages. Operating at up to 150°C, it's suitable for enhancement mode circuits needing high power dissipation.

Median Price

$0.321

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 840 parts In-Stock

1+ parts

$0.128

100+ parts

$0.120

1k+ parts

$0.109

10k+ parts

-

840

$0.128

$0.120

$0.109

-

Arrow

USA . 12,000 parts In-Stock

1+ parts

$0.420

100+ parts

$0.204

1k+ parts

$0.147

10k+ parts

$0.110

12,000

$0.420

$0.204

$0.147

$0.110

DigiKey

USA . 2 parts In-Stock

1+ parts

$0.650

100+ parts

-

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-

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$0.120

2

$0.650

-

-

$0.120

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$0.222

1k+ parts

$0.159

10k+ parts

$0.120

6,000

-

$0.222

$0.159

$0.120

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,277 parts In-Stock

1+ parts

$0.122

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-

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1,277

$0.122

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Vyrian

USA . 886 parts In-Stock

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$0.128

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886

$0.128

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Chip Stock

USA . 24,500 parts In-Stock

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24,500

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R&J Components

USA . 12,000 parts In-Stock

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12,000

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Flip Electronics

USA . 6,000 parts In-Stock

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6,000

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

1+ parts

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3,000

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TME

Poland . 2,790 parts In-Stock

1+ parts

-

100+ parts

$0.192

1k+ parts

$0.173

10k+ parts

$0.160

2,790

-

$0.192

$0.173

$0.160

Legend Electronics Inc.

USA . 929 parts In-Stock

1+ parts

-

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929

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Bristol Electronics

USA . 600 parts In-Stock

1+ parts

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600

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Cyclops Electronics Ltd

UK . 100 parts In-Stock

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100

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LittleDiode

UK . 21 parts In-Stock

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21

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,308 parts In-Stock

1+ parts

$0.109

100+ parts

-

1k+ parts

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4,308

$0.109

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-

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Corphita

USA . 2,492 parts In-Stock

1+ parts

$0.115

100+ parts

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2,492

$0.115

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-

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Corohmni

South Africa . 210 parts In-Stock

1+ parts

$0.128

100+ parts

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210

$0.128

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Component Stockers USA

USA . 36,242 parts In-Stock

1+ parts

$0.130

100+ parts

$0.120

1k+ parts

$0.110

10k+ parts

$0.100

36,242

$0.130

$0.120

$0.110

$0.100

Continental Prestige Electronics

USA . 6,600 parts In-Stock

1+ parts

$0.358

100+ parts

$0.216

1k+ parts

$0.147

10k+ parts

$0.141

6,600

$0.358

$0.216

$0.147

$0.141

Microchip USA

USA . 1,982 parts In-Stock

1+ parts

$0.903

100+ parts

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1,982

$0.903

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Native Components

USA . 439 parts In-Stock

1+ parts

$31.792

100+ parts

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10k+ parts

$30.521

439

$31.792

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-

$30.521

Northwest PG Solutions

USA . 1,184 parts In-Stock

1+ parts

$34.972

100+ parts

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1,184

$34.972

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Kepictronics

USA . 71,800 parts In-Stock

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71,800

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Perfect Parts

USA . 57,120 parts In-Stock

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57,120

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Eastek

USA . 6,000 parts In-Stock

1+ parts

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100+ parts

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$0.170

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6,000

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$0.170

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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6,000

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Kulean Microsystems

USA . 4,033 parts In-Stock

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4,033

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SupplyDigital Components

Austria . 3,572 parts In-Stock

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3,572

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Problanco Electronics

Mexico . 2,715 parts In-Stock

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2,715

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A-Z Elektronik GmbH

Germany . 1,620 parts In-Stock

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1,620

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Supply Digital

USA . 1,502 parts In-Stock

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TANS Electronics

Latvia . 1,249 parts In-Stock

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1,249

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 80 parts In-Stock

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80

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Overview

Upgrade your electronic devices with the FDY101PZ by Onsemi, a top-quality P-Channel Field Effect Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this transistor is perfect for a wide range of applications. Its small, compact design makes it easy to integrate into your projects, while its built-in diode enhances functionality. Experience the benefits of enhanced mode operation and high power dissipation, all in a convenient surface-mount package. Trust Onsemi to deliver cutting-edge technology that adds value to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Efficient for certain circuit designs and applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient design with added functionality of a built-in diode.

Surface Mount: YES

Easy to mount on PCBs, saves space and provides efficient circuit layout.

Minimum DS Breakdown Voltage: 20 V

Withstands high voltage levels, suitable for various applications.

Package Shape: RECTANGULAR

Standard shape for easy integration into existing circuit designs.

Terminal Form: FLAT

Easily connectable and solderable.

Operating Mode: ENHANCEMENT MODE

Provides improved performance and efficiency in operation.

Maximum Drain Current (Abs) (ID): 0.15 A

Capable of handling moderate current levels.

No. of Terminals: 3

Simplifies circuit connections.

Maximum Power Dissipation (Abs): 0.625 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and widely used technology.

Maximum Operating Temperature: 150 °C

Can operate efficiently in higher temperature environments.

Transistor Element Material: SILICON

Common and reliable material for transistors.

Terminal Finish: MATTE TIN

Durable finish for reliable connections.

Maximum Drain Current (ID): 0.15 A

Capable of handling moderate current levels.

Maximum Drain-Source On Resistance: 8 ohm

Low resistance for efficient current flow.

Terminal Position: DUAL

Provides flexibility in circuit connections.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a specified time.

Peak Reflow Temperature °C: 260

Suitable for reflow soldering processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDY101PZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.15 A

Maximum Drain Current (ID):

.15 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

FDY101PZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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