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FDS5690

Onsemi

FDS5690 by Onsemi

FDS5690 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 7A Drain Current, and 0.028 ohm On Resistance. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.

Median Price

$0.643

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 39 parts In-Stock

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$1.100

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39

$1.100

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DigiKey

USA . 51,034 parts In-Stock

1+ parts

$1.460

100+ parts

$0.616

1k+ parts

$0.440

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51,034

$1.460

$0.616

$0.440

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Arrow

USA . 15,000 parts In-Stock

1+ parts

$4.380

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15,000

$4.380

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Mouser Electronics

USA . 16,036 parts In-Stock

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$0.355

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$0.355

Flip Electronics (Authorized)

USA . 15,622 parts In-Stock

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15,622

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Verical

USA . 15,000 parts In-Stock

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15,000

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Chip1Stop

Japan . 15,000 parts In-Stock

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$0.365

15,000

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$0.365

Rochester

USA . 5,070 parts In-Stock

1+ parts

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100+ parts

$0.567

1k+ parts

$0.470

10k+ parts

$0.419

5,070

-

$0.567

$0.470

$0.419

Element14

Singapore . 759 parts In-Stock

1+ parts

-

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$0.643

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$0.443

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$0.433

759

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$0.643

$0.443

$0.433

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,147 parts In-Stock

1+ parts

$0.394

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2,147

$0.394

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Nova Conductors

Japan . 150 parts In-Stock

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$0.574

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150

$0.574

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Vyrian

USA . 14,803 parts In-Stock

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Chip Stock

USA . 6,008 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,491 parts In-Stock

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Prism Electronics

USA . 1,876 parts In-Stock

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1,876

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Lantek

USA . 1,680 parts In-Stock

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1,680

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Semi Source

USA . 899 parts In-Stock

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899

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Flip Electronics

USA . 622 parts In-Stock

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622

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NPI Materials, Inc.

USA . 5 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 395 parts In-Stock

1+ parts

$0.193

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395

$0.193

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Continental Prestige Electronics

USA . 1,103 parts In-Stock

1+ parts

$0.283

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1,103

$0.283

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Ampacity Inc.

Singapore . 14,853 parts In-Stock

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$0.302

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14,853

$0.302

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Corphita

USA . 2,168 parts In-Stock

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$0.374

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2,168

$0.374

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Argo Parts USA

USA . 2,531 parts In-Stock

1+ parts

$0.574

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$0.557

2,531

$0.574

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$0.557

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.574

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2,000

$0.574

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Andel Nordic

Denmark . 501 parts In-Stock

1+ parts

$9.824

100+ parts

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$9.431

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$9.431

501

$9.824

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$9.431

$9.431

Perfect Parts

USA . 41,141 parts In-Stock

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Lixinc

USA . 17,449 parts In-Stock

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Kulean Microsystems

USA . 2,962 parts In-Stock

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TANS Electronics

Latvia . 2,414 parts In-Stock

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Problanco Electronics

Mexico . 1,944 parts In-Stock

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Supply Digital

USA . 1,920 parts In-Stock

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GreenTree Electronics

Israel . 1,680 parts In-Stock

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1,680

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Assy Fe

Spain . 1,000 parts In-Stock

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Kepictronics

USA . 990 parts In-Stock

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990

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SupplyDigital Components

Austria . 768 parts In-Stock

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768

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UHIMA Technologies

Türkiye . 188 parts In-Stock

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188

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Overview

Unlock the potential of your electronic devices with the FDS5690 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability in their products. The FDS5690 falls under the category of Small Signal Field Effect Transistors (FET), making it ideal for switching applications. With a built-in diode and a maximum drain current of 7A, this transistor offers unmatched performance and efficiency. Say goodbye to power limitations and hello to seamless operation with the FDS5690 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and reliability to the product.

Polarity or Channel Type: N-CHANNEL

N-channel type allows for efficient switching applications in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances the functionality and versatility of the transistor in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

Rectangular shape allows for space-saving and efficient PCB layout.

Terminal Form: GULL WING

Gull wing terminals ensure secure connections and ease of soldering during installation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation provides enhanced control and performance characteristics.

Maximum Drain Current (Abs): 7 A

High maximum drain current rating of 7A allows for handling greater current loads with ease.

No. of Terminals: 8

The availability of 8 terminals allows for versatile connectivity options in circuits.

Maximum Power Dissipation (Abs): 2.5 W

With maximum power dissipation of 2.5W, the transistor can handle heat dissipation effectively, ensuring reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style offers compact size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures high performance and reliability in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance in elevated temperature environments.

Transistor Element Material: SILICON

Silicon material of the transistor element provides excellent electrical properties and performance characteristics.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance for long-term reliability.

Maximum Drain-Source On Resistance: 0.028 ohm

Low drain-source on resistance of 0.028 ohm ensures efficient power management and reduced heat dissipation.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connectivity and layout.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperature for up to 30 seconds, ensuring secure soldering connections.

Peak Reflow Temperature °C: 260

Peak reflow temperature rating of 260°C allows for reliable and stable soldering operations.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS5690 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS5690 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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