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FDS5680_NL

Fairchild Semiconductor

FDS5680_NL by Fairchild Semiconductor

FDS5680_NL by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 8A Drain Current, 0.02 ohm On Resistance, and 2.5W Power Dissipation in a SMALL OUTLINE package.

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Overview

Enhance your electronic projects with the FDS5680_NL by Fairchild Semiconductor, a high-quality N-CHANNEL Small Signal Field Effect Transistor (FET) with a built-in diode. Perfect for switching applications, this transistor offers a maximum drain current of 8A and a low on-resistance of 0.02 ohm, ensuring efficient performance. With a robust package design and advanced semiconductor technology, this transistor is reliable and versatile for a wide range of projects. Experience the benefits of enhanced power dissipation, temperature resistance up to 150°C, and easy surface mounting. Upgrade your designs with the FDS5680_NL and see the difference in quality and performance today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term performance.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching capabilities in electronic circuits.

Minimum DS Breakdown Voltage: 60 V

Suitable for a wide range of applications where high voltage operation is required.

Maximum Drain Current (Abs) (ID): 8 A

Capable of handling high current loads, making it versatile for different circuit designs.

Maximum Power Dissipation (Abs): 2.5 W

Efficient power handling capability, ensuring the transistor does not overheat during operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for various operating environments.

Transistor Element Material: SILICON

Provides good performance and reliability in electronic circuits.

Maximum Drain-Source On Resistance: 0.02 ohm

Low on-resistance leads to minimal power loss and efficient operation.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDS5680_NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

8 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDS5680_NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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