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FDMB2307NZ

Onsemi

FDMB2307NZ by Onsemi

FDMB2307NZ by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and max drain current of 9.7A. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 2.2W. This small outline transistor has a peak reflow temp of 260°C and feedback capacitance of 320pF.

Median Price

$0.398

Lifecycle Status

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11

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1k+

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DigiKey

USA . 7,853 parts In-Stock

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$1.450

100+ parts

$0.608

1k+ parts

$0.434

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7,853

$1.450

$0.608

$0.434

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Mouser Electronics

USA . 36,000 parts In-Stock

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$0.337

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$0.337

Verical

USA . 9,000 parts In-Stock

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$0.335

9,000

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$0.335

Rochester

USA . 158 parts In-Stock

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$0.458

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$0.380

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$0.339

158

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$0.339

Adafruit Industries

USA . 32 parts In-Stock

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Digiode

USA . 1,669 parts In-Stock

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$0.355

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1,669

$0.355

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Nova Conductors

Japan . 100 parts In-Stock

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$0.670

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100

$0.670

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Chip Stock

USA . 18,000 parts In-Stock

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Vyrian

USA . 10,463 parts In-Stock

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Bristol Electronics

USA . 5,148 parts In-Stock

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Cyclops Electronics Ltd

UK . 89 parts In-Stock

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Semicontronic

India . 10,702 parts In-Stock

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$0.285

100+ parts

$0.278

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$0.276

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10,702

$0.285

$0.278

$0.276

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Ampacity Inc.

Singapore . 10,590 parts In-Stock

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$0.285

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$0.285

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Corohmni

South Africa . 143 parts In-Stock

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$0.335

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143

$0.335

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Corphita

USA . 1,139 parts In-Stock

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$0.337

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$0.337

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Component Stockers USA

USA . 33,108 parts In-Stock

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$0.380

100+ parts

$0.360

1k+ parts

$0.390

10k+ parts

$0.330

33,108

$0.380

$0.360

$0.390

$0.330

Argo Parts USA

USA . 2,613 parts In-Stock

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$0.429

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$0.416

2,613

$0.429

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$0.416

Continental Prestige Electronics

USA . 2,308 parts In-Stock

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$0.429

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$0.420

2,308

$0.429

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$0.420

Aztec Data Supply Inc.

USA . 4,011 parts In-Stock

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$0.488

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4,011

$0.488

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Microchip USA

USA . 2,107 parts In-Stock

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$2.420

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$2.400

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$2.390

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$2.390

2,107

$2.420

$2.400

$2.390

$2.390

Perfect Parts

USA . 115,516 parts In-Stock

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RC Electronics

USA . 93,594 parts In-Stock

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$0.450

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Lixinc

USA . 19,777 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,153 parts In-Stock

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Kulean Microsystems

USA . 8,258 parts In-Stock

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Problanco Electronics

Mexico . 6,086 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 3,951 parts In-Stock

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SupplyDigital Components

Austria . 3,096 parts In-Stock

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Supply Digital

USA . 1,572 parts In-Stock

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Kepictronics

USA . 90 parts In-Stock

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UHIMA Technologies

Türkiye . 73 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.657

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$0.637

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$0.623

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$0.637

$0.623

Advanced Electronics

New Zealand . 32 parts In-Stock

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Overview

Looking for a reliable solution for your switching applications? Look no further than the FDMB2307NZ by Onsemi. Made with high-quality materials and cutting-edge technology, this N-channel field effect transistor offers exceptional performance and reliability. Its common drain configuration with built-in diode makes it versatile for a wide range of uses. With a maximum drain current of 9.7A and a maximum power dissipation of 2.2W, this transistor delivers power and efficiency in a compact package. Trust Onsemi to provide you with the best in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in switching applications and offer good performance characteristics.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

The common drain configuration with 2 elements and a built-in diode allows for efficient switching operations in various electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in control circuits.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Drain Current (Abs) (ID): 9.7 A

With a high maximum drain current capacity, this transistor can handle heavy loads and high-power applications effectively.

Maximum Power Dissipation (Abs): 2.2 W

The high power dissipation capacity of 2.2W ensures stable operation and prevents overheating during use.

Maximum Operating Temperature: 150 °C

The transistor can operate effectively at temperatures up to 150°C, suitable for a wide range of environmental conditions.

Maximum Feedback Capacitance (Crss): 320 pF

The low feedback capacitance of 320pF enhances the stability and efficiency of the transistor in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDMB2307NZ attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Maximum Drain Current (Abs) (ID):

9.7 A

Maximum Drain Current (ID):

9.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

320 pF

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMB2307NZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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