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FDMB3900AN

Onsemi

FDMB3900AN by Onsemi

FDMB3900AN by Onsemi is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a Max Drain Current of 7A, Max Power Dissipation of 1.6W, and Max Operating Temperature of 150°C. This small outline transistor features METAL-OXIDE SEMICONDUCTOR technology and operates in ENHANCEMENT MODE.

Median Price

$0.382

Lifecycle Status

EOL

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,385,738 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.276

10k+ parts

$0.248

1,385,738

-

$0.357

$0.276

$0.248

Rochester

USA . 1,353,909 parts In-Stock

1+ parts

-

100+ parts

$0.407

1k+ parts

$0.338

10k+ parts

$0.301

1,353,909

-

$0.407

$0.338

$0.301

Verical

USA . 1,351,759 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.422

10k+ parts

$0.376

1,351,759

-

-

$0.422

$0.376

Flip Electronics (Authorized)

USA . 5,731 parts In-Stock

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5,731

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DigiKey

USA . 2,731 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.230

2,731

-

-

-

$0.230

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 851 parts In-Stock

1+ parts

$0.332

100+ parts

-

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851

$0.332

-

-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.337

100+ parts

-

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100

$0.337

-

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Vyrian

USA . 833,246 parts In-Stock

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833,246

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Chip Stock

USA . 3,665 parts In-Stock

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3,665

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Flip Electronics

USA . 2,731 parts In-Stock

1+ parts

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2,731

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Cyclops Electronics Ltd

UK . 2,341 parts In-Stock

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2,341

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Distributors (Availability)

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Ampacity Inc.

Singapore . 833,561 parts In-Stock

1+ parts

$0.196

100+ parts

-

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833,561

$0.196

-

-

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Corohmni

South Africa . 456 parts In-Stock

1+ parts

$0.230

100+ parts

-

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456

$0.230

-

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Corphita

USA . 617 parts In-Stock

1+ parts

$0.314

100+ parts

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617

$0.314

-

-

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Argo Parts USA

USA . 288 parts In-Stock

1+ parts

$0.337

100+ parts

-

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-

10k+ parts

$0.327

288

$0.337

-

-

$0.327

Component Stockers USA

USA . 1,817,853 parts In-Stock

1+ parts

$0.360

100+ parts

$0.340

1k+ parts

$0.310

10k+ parts

$0.310

1,817,853

$0.360

$0.340

$0.310

$0.310

Aztec Data Supply Inc.

USA . 4,809 parts In-Stock

1+ parts

$0.546

100+ parts

-

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4,809

$0.546

-

-

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Continental Prestige Electronics

USA . 1,421,781 parts In-Stock

1+ parts

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100+ parts

$0.282

1k+ parts

$0.218

10k+ parts

-

1,421,781

-

$0.282

$0.218

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Perfect Parts

USA . 39,648 parts In-Stock

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39,648

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Lixinc

USA . 13,288 parts In-Stock

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13,288

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Kulean Microsystems

USA . 7,069 parts In-Stock

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7,069

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TANS Electronics

Latvia . 4,901 parts In-Stock

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4,901

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Problanco Electronics

Mexico . 3,197 parts In-Stock

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3,197

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Supply Digital

USA . 2,503 parts In-Stock

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2,503

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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SupplyDigital Components

Austria . 1,674 parts In-Stock

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1,674

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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789

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Microchip USA

USA . 204 parts In-Stock

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204

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

$0.330

1k+ parts

$0.320

10k+ parts

$0.313

100

-

$0.330

$0.320

$0.313

Overview

Discover the cutting-edge FDMB3900AN by Onsemi, a small signal field effect transistor that offers exceptional quality and reliability. Manufactured by Onsemi, a leading name in the industry, this N-channel transistor with built-in diode is perfect for switching applications. With a maximum drain current of 7A and a low on-resistance of 0.023 ohm, this transistor delivers high performance and efficiency. Whether you're working on consumer electronics, industrial equipment, or automotive systems, the FDMB3900AN provides unmatched value and functionality. Upgrade your designs with this top-of-the-line component from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration allows for efficient switching operations, adding versatility to the transistor's use.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration offers flexibility and convenience for circuit design, making it a practical choice for engineers.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides high performance and reliability in such operations.

Surface Mount: YES

With surface mount capability, this transistor is easy to integrate into circuit boards, making assembly more efficient.

Minimum DS Breakdown Voltage: 25 V

The high breakdown voltage ensures the transistor can handle higher voltages, making it suitable for a wide range of applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact form factor, maximizing space efficiency in electronic designs.

Terminal Form: NO LEAD

The lead-free terminals reduce environmental impact and offer improved soldering quality for assembly.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation enhances the transistor's performance and efficiency in various circuit applications.

No. of Elements: 2

With two elements, this transistor offers increased functionality and versatility for complex circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDMB3900AN attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

215 pF

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMB3900AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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