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FDMB3800N

Onsemi

FDMB3800N by Onsemi

FDMB3800N by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 4.8A Drain Current, and 40 ohm On Resistance. It is used for SWITCHING applications in ENHANCEMENT MODE with a max operating temperature of 150°C.

Median Price

$0.651

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1,744 parts In-Stock

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$0.505

100+ parts

$0.474

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$0.451

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1,744

$0.505

$0.474

$0.451

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Chip1Stop

Japan . 2,550 parts In-Stock

1+ parts

$0.784

100+ parts

$0.589

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$0.492

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2,550

$0.784

$0.589

$0.492

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Mouser Electronics

USA . 17,808 parts In-Stock

1+ parts

$1.660

100+ parts

$0.803

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$0.571

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$0.503

17,808

$1.660

$0.803

$0.571

$0.503

Rochester

USA . 585,775 parts In-Stock

1+ parts

-

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$0.651

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$0.541

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$0.482

585,775

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$0.651

$0.541

$0.482

Verical

USA . 510,446 parts In-Stock

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$0.676

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$0.603

510,446

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$0.676

$0.603

RS (Exports)

UK . 6,000 parts In-Stock

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$0.262

6,000

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$0.262

Future Electronics

Canada . 3,000 parts In-Stock

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$0.315

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$0.315

Flip Electronics (Authorized)

USA . 598 parts In-Stock

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Digiode

USA . 2,512 parts In-Stock

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$0.506

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Nova Conductors

Japan . 10 parts In-Stock

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$0.591

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Chip Stock

USA . 110,900 parts In-Stock

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Vyrian

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NAC Semi

USA . 6,000 parts In-Stock

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SPM Sales

USA . 4,360 parts In-Stock

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Next Level Components, LLC

USA . 3,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.447

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$0.447

NexGen Digital

USA . 2,443 parts In-Stock

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Euro-Tech

UK . 2,359 parts In-Stock

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Beltway Electronics Company

USA . 2,243 parts In-Stock

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Sunrise Surplus Inc.

USA . 1,607 parts In-Stock

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Flip Electronics

USA . 598 parts In-Stock

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PC Components Company LLC

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Bristol Electronics

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Sea View Technologies

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Inventory MP

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Semi Source

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Ampacity Inc.

Singapore . 100,197 parts In-Stock

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$0.353

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Corohmni

South Africa . 183 parts In-Stock

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Corphita

USA . 1,966 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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$0.556

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Continental Prestige Electronics

USA . 2,078 parts In-Stock

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$1.140

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$0.706

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$0.495

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2,078

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Microchip USA

USA . 4,529 parts In-Stock

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$3.701

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Perfect Parts

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Kulean Microsystems

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Problanco Electronics

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Kepictronics

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SupplyDigital Components

Austria . 4,344 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 443 parts In-Stock

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TANS Electronics

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Overview

Enhance your electronic devices with the FDMB3800N by Onsemi, a high-quality N-CHANNEL Small Signal Field Effect Transistor perfect for switching applications. With its separate 2 elements design and built-in diode, this transistor offers superior performance and reliability. Its compact package shape and surface mount capability make it ideal for various projects. Trust in Onsemi's reputation for excellence in semiconductor technology and elevate your designs with the FDMB3800N's maximum power dissipation and low on-resistance. Upgrade your electronics today with the FDMB3800N, your go-to solution for efficient and dependable performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring it can withstand various environmental conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance characteristics compared to P-channel transistors, making this product suitable for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast switching speeds and high efficiency.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltages, making it suitable for a wide range of applications.

Maximum Drain Current (Abs) (ID): 4.8 A

The high maximum drain current capability of 4.8 A allows the transistor to handle higher loads, making it versatile for various circuit designs.

Maximum Power Dissipation (Abs): 1.6 W

The maximum power dissipation of 1.6 W ensures that the transistor can operate efficiently without overheating, leading to reliable performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, making it suitable for industrial applications.

Maximum Drain-Source On Resistance: 40 ohm

The low on-resistance of 40 ohms ensures minimal power loss and high efficiency when the transistor is conducting, making it ideal for power switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) FDMB3800N attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.8 A

Maximum Drain Current (ID):

4.8 A

Maximum Drain-Source On Resistance:

40 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

60 pF

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDMB3800N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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