Loading...

FDD86540

Onsemi

FDD86540 by Onsemi

The Onsemi FDD86540 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 120A IDM and 228mJ EAS, suitable for high-power operations. With 0.0041 ohm RDS(on) and 127W Pd, it ensures efficient performance in ENHANCEMENT MODE operation at up to 150°C.

Median Price

$1.645

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 4,161 parts In-Stock

1+ parts

$1.930

100+ parts

$0.824

1k+ parts

$0.652

10k+ parts

-

4,161

$1.930

$0.824

$0.652

-

Element14

Singapore . 1,470 parts In-Stock

1+ parts

$1.995

100+ parts

$1.439

1k+ parts

$1.157

10k+ parts

$1.105

1,470

$1.995

$1.439

$1.157

$1.105

Mouser Electronics

USA . 6,823 parts In-Stock

1+ parts

$2.000

100+ parts

$0.856

1k+ parts

$0.620

10k+ parts

$0.553

6,823

$2.000

$0.856

$0.620

$0.553

DigiKey

USA . 2,168 parts In-Stock

1+ parts

$2.000

100+ parts

$0.856

1k+ parts

$0.620

10k+ parts

-

2,168

$2.000

$0.856

$0.620

-

Farnell

UK . 1,470 parts In-Stock

1+ parts

$2.841

100+ parts

$1.671

1k+ parts

$1.194

10k+ parts

$1.135

1,470

$2.841

$1.671

$1.194

$1.135

Rochester

USA . 21,125 parts In-Stock

1+ parts

-

100+ parts

$1.360

1k+ parts

$1.130

10k+ parts

$1.010

21,125

-

$1.360

$1.130

$1.010

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.500

5,000

-

-

-

$0.500

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.485

2,500

-

-

-

$0.485

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.100

2,500

-

-

-

$1.100

RS (Exports)

UK . 1,965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$1.183

1,965

-

-

-

$1.183

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,238 parts In-Stock

1+ parts

$1.064

100+ parts

-

1k+ parts

-

10k+ parts

-

2,238

$1.064

-

-

-

Nova Conductors

Japan . 30 parts In-Stock

1+ parts

$1.280

100+ parts

-

1k+ parts

-

10k+ parts

-

30

$1.280

-

-

-

Chip Stock

USA . 34,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

34,500

-

-

-

-

Vyrian

USA . 9,418 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,418

-

-

-

-

NAC Semi

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.925

5,000

-

-

-

$0.925

Flip Electronics

USA . 1,612 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,612

-

-

-

-

Cyclops Electronics Ltd

UK . 69 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

69

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,685 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

10k+ parts

-

3,685

$0.931

-

-

-

Ampacity Inc.

Singapore . 9,524 parts In-Stock

1+ parts

$0.940

100+ parts

-

1k+ parts

-

10k+ parts

-

9,524

$0.940

-

-

-

Semicontronic

India . 8,606 parts In-Stock

1+ parts

$0.940

100+ parts

$0.916

1k+ parts

$0.912

10k+ parts

-

8,606

$0.940

$0.916

$0.912

-

Corohmni

South Africa . 135 parts In-Stock

1+ parts

$0.957

100+ parts

-

1k+ parts

-

10k+ parts

-

135

$0.957

-

-

-

Corphita

USA . 1,714 parts In-Stock

1+ parts

$1.008

100+ parts

-

1k+ parts

-

10k+ parts

-

1,714

$1.008

-

-

-

Component Stockers USA

USA . 59,221 parts In-Stock

1+ parts

$1.130

100+ parts

$1.060

1k+ parts

$0.960

10k+ parts

$0.960

59,221

$1.130

$1.060

$0.960

$0.960

Argo Parts USA

USA . 4,292 parts In-Stock

1+ parts

$1.280

100+ parts

-

1k+ parts

-

10k+ parts

-

4,292

$1.280

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$1.280

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$1.280

-

-

-

Continental Prestige Electronics

USA . 270 parts In-Stock

1+ parts

$2.300

100+ parts

$1.400

1k+ parts

$1.010

10k+ parts

-

270

$2.300

$1.400

$1.010

-

Microchip USA

USA . 7,197 parts In-Stock

1+ parts

$7.478

100+ parts

-

1k+ parts

-

10k+ parts

-

7,197

$7.478

-

-

-

Perfect Parts

USA . 79,520 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

79,520

-

-

-

-

RC Electronics

USA . 39,710 parts In-Stock

1+ parts

-

100+ parts

$1.310

1k+ parts

$1.190

10k+ parts

$1.160

39,710

-

$1.310

$1.190

$1.160

Kepictronics

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

Lixinc

USA . 15,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,738

-

-

-

-

Eastek

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.990

10k+ parts

-

12,500

-

-

$1.990

-

Epart123

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$4.500

10,000

-

-

-

$4.500

Kulean Microsystems

USA . 7,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,027

-

-

-

-

Futuretech Components

Singapore . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

SupplyDigital Components

Austria . 2,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,982

-

-

-

-

Supply Digital

USA . 2,699 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,699

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

TANS Electronics

Latvia . 2,089 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,089

-

-

-

-

UHIMA Technologies

Türkiye . 267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

267

-

-

-

-

Problanco Electronics

Mexico . 229 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

229

-

-

-

-

Overview

Unleash the power of innovation with the FDD86540 from Onsemi. This high-quality Power Field Effect Transistor offers unmatched performance and reliability in switching applications. With a maximum pulsated drain current of 120A and a minimum DS breakdown voltage of 60V, this N-Channel transistor is designed to exceed expectations. Its compact rectangular package and gull wing terminals make installation a breeze. Trust Onsemi's expertise in semiconductor technology to deliver a product that goes above and beyond. Upgrade your systems today and experience the benefits of the FDD86540.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and flexibility in design for this power FET.

Polarity or Channel Type: N-CHANNEL

N-channel type allows for efficient power management and control, making it a reliable choice for switching applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this power FET offers high performance and reliability in power control.

Surface Mount: YES

The surface mount capability makes installation and soldering process convenient and efficient.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this power FET can handle high voltages without the risk of damage.

Package Shape: RECTANGULAR

The rectangular package shape enables easy mounting and ensures space-saving in compact electronic devices.

Terminal Form: GULL WING

Gull wing terminal form provides secure connection and enhances the overall durability of the power FET.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the power flow, making it ideal for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 120 A

With a maximum pulsed drain current of 120A, this power FET can handle high power demands effectively.

Avalanche Energy Rating (EAS): 228 mJ

The high avalanche energy rating of 228mJ ensures reliable performance under stressful conditions.

Maximum Drain Current (Abs) (ID): 50 A

The maximum drain current of 50A ensures optimal power handling capacity for various applications.

No. of Terminals: 2

With only 2 terminals, this power FET simplifies the circuit design and ensures easy installation.

Maximum Power Dissipation (Abs): 127 W

The high maximum power dissipation of 127W ensures efficient heat management and long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this power FET ideal for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology ensures high performance and efficiency in power management.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this power FET can withstand high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability, making this power FET a suitable choice for various applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish with annealing enhances the solderability and ensures reliable connections for effective power control.

Maximum Drain Current (ID): 21.5 A

The maximum drain current of 21.5A allows for efficient power handling and control in demanding applications.

Maximum Drain-Source On Resistance: 0.0041 ohm

The low drain-source on resistance of 0.0041 ohm ensures minimal power loss and efficient power transfer.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures easy connection to the circuit.

Case Connection: DRAIN

The case connection at the drain ensures efficient power flow and reliable performance in power management applications.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this power FET offers easy and convenient soldering process.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this power FET can withstand high-temperature soldering processes effectively.

Technical Specifications

Power Field Effect Transistors (FET) FDD86540 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

228 mJ

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

21.5 A

Maximum Drain-Source On Resistance:

.0041 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

120 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDD86540 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20